Electron spin relaxation dynamics in InGaAs/InP multiple-quantum wells

Atsushi Tackeuchi, Osamu Wada

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at room temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E1e, according to τs ∝ E1e -1. The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spin relaxation mechanism.

    Original languageEnglish
    Pages (from-to)98-99
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume37
    Issue number1
    Publication statusPublished - 1998 Jan

    Fingerprint

    electron spin
    Semiconductor quantum wells
    quantum wells
    Electrons
    Relaxation time
    room temperature
    Polarization
    Temperature
    relaxation time
    polarization
    interactions
    energy

    Keywords

    • D'yakonov-Perel'
    • Electron
    • Elliott-Yafet
    • InGaAs
    • MQW
    • Spin relaxation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Engineering(all)

    Cite this

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    abstract = "The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at room temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E1e, according to τs ∝ E1e -1. The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spin relaxation mechanism.",
    keywords = "D'yakonov-Perel', Electron, Elliott-Yafet, InGaAs, MQW, Spin relaxation",
    author = "Atsushi Tackeuchi and Osamu Wada",
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    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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    TY - JOUR

    T1 - Electron spin relaxation dynamics in InGaAs/InP multiple-quantum wells

    AU - Tackeuchi, Atsushi

    AU - Wada, Osamu

    PY - 1998/1

    Y1 - 1998/1

    N2 - The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at room temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E1e, according to τs ∝ E1e -1. The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spin relaxation mechanism.

    AB - The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at room temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E1e, according to τs ∝ E1e -1. The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spin relaxation mechanism.

    KW - D'yakonov-Perel'

    KW - Electron

    KW - Elliott-Yafet

    KW - InGaAs

    KW - MQW

    KW - Spin relaxation

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    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 1

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