Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence

Tetsuya Nishimura, Xue Lun Wang, Mutsuo Ogura, Atsushi Tackeuchi, Osamu Wada

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the spin relaxation in GaAs-based quantum wires and wells studied at 50 K < T < 180 K by analyzing the circularly polarized photoluminescence transients. A 3.5-times shortening of the electron spin relaxation time is observed in GaAs/AlGaAs quantum wires compared with that in quantum wells at 180 K. The observed results suggest that a spin flip in the quantum wires is caused predominantly by the D'yakonov-Perel' effect due to spin-orbit interaction. The strong quantum confinement of electrons in the reduced dimensionality of the quantum structure leads to a larger spin splitting energy and a stronger temperature dependence of spin relaxation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number8 B
Publication statusPublished - 1999 Aug
Externally publishedYes

Fingerprint

Semiconductor quantum wires
quantum wires
electron spin
aluminum gallium arsenides
Photoluminescence
photoluminescence
Semiconductor quantum wells
Electrons
Quantum confinement
quantum wells
Relaxation time
Orbits
spin-orbit interactions
relaxation time
temperature dependence
Temperature
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron spin relaxation in GaAs/AlGaAs quantum wires analyzed by transient photoluminescence. / Nishimura, Tetsuya; Wang, Xue Lun; Ogura, Mutsuo; Tackeuchi, Atsushi; Wada, Osamu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 8 B, 08.1999.

Research output: Contribution to journalArticle

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