Electron spin relaxation in InGaAs/InP multiple-quantum wells

Atsushi Tackeuchi*, Osamu Wada, Yuji Nishikawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

95 Citations (Scopus)


The electron spin relaxation of InGaAs/InP multiple-quantum wells (MQW) is investigated using time-resolved polarization-dependent absorption measurement. The MQW has an excitonic absorption at 1.54 μm which is suitable for application in optical communications. A theoretical prediction assuming the D'yakonov-Perel' interaction as the main relaxation mechanism gives a spin relaxation rate for the InGaAs quantum well over twice as high as that for the GaAs quantum well. The spin relaxation time measured at room temperature is 5.2 ps and found to be an order of magnitude faster than that of a GaAs quantum well.

Original languageEnglish
Pages (from-to)1131-1133
Number of pages3
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 1997 Mar 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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