Electron spin relaxation in InGaAs/InP multiple-quantum wells

Atsushi Tackeuchi, Osamu Wada, Yuji Nishikawa

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

The electron spin relaxation of InGaAs/InP multiple-quantum wells (MQW) is investigated using time-resolved polarization-dependent absorption measurement. The MQW has an excitonic absorption at 1.54 μm which is suitable for application in optical communications. A theoretical prediction assuming the D'yakonov-Perel' interaction as the main relaxation mechanism gives a spin relaxation rate for the InGaAs quantum well over twice as high as that for the GaAs quantum well. The spin relaxation time measured at room temperature is 5.2 ps and found to be an order of magnitude faster than that of a GaAs quantum well.

Original languageEnglish
Pages (from-to)1131-1133
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number9
Publication statusPublished - 1997 Mar 3
Externally publishedYes

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electron spin
quantum wells
optical communication
relaxation time
room temperature
polarization
predictions
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron spin relaxation in InGaAs/InP multiple-quantum wells. / Tackeuchi, Atsushi; Wada, Osamu; Nishikawa, Yuji.

In: Applied Physics Letters, Vol. 70, No. 9, 03.03.1997, p. 1131-1133.

Research output: Contribution to journalArticle

Tackeuchi, A, Wada, O & Nishikawa, Y 1997, 'Electron spin relaxation in InGaAs/InP multiple-quantum wells', Applied Physics Letters, vol. 70, no. 9, pp. 1131-1133.
Tackeuchi, Atsushi ; Wada, Osamu ; Nishikawa, Yuji. / Electron spin relaxation in InGaAs/InP multiple-quantum wells. In: Applied Physics Letters. 1997 ; Vol. 70, No. 9. pp. 1131-1133.
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