Electron spin resonance study of organic interfaces in ion gel-gated rubrene single-crystal transistors

Yuki Takahashi; Masaki Tsuji; Yohei Yomogida; Taishi Takenobu; Yoshihiro Iwasa; Kazuhiro Marumoto

doi:10.7567/APEX.6.041603

Electron spin resonance study of organic interfaces in ion gel-gated rubrene single-crystal transistors

Yuki Takahashi, Masaki Tsuji, Yohei Yomogida, Taishi Takenobu, Yoshihiro Iwasa, Kazuhiro Marumoto

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Organic interfaces of rubrene single crystals (RSCs) in ion gel-gated electric double-layer transistors (EDLTs) were investigated by electron spin resonance (ESR). The EDLTs were fabricated by laminating ion-gel films onto RSCs. Clear ESR signals due to field-injected holes in RSCs were successfully observed at low gate voltages, showing a high spin concentration due to the high capacitance of EDLTs. The analyses of anisotropic ESR signals and its gate-voltage dependence show that the bulk molecular orientation at RSCs' interfaces is preserved without forming deep trapping levels, which demonstrate that organic interfaces in RSC-EDLTs are clean and undamaged under a strong electric field in EDLTs.

Original language	English
Article number	041603
Journal	Applied Physics Express
Volume	6
Issue number	4
DOIs	https://doi.org/10.7567/APEX.6.041603
Publication status	Published - 2013 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Electron spin resonance study of organic interfaces in ion gel-gated rubrene single-crystal transistors",

abstract = "Organic interfaces of rubrene single crystals (RSCs) in ion gel-gated electric double-layer transistors (EDLTs) were investigated by electron spin resonance (ESR). The EDLTs were fabricated by laminating ion-gel films onto RSCs. Clear ESR signals due to field-injected holes in RSCs were successfully observed at low gate voltages, showing a high spin concentration due to the high capacitance of EDLTs. The analyses of anisotropic ESR signals and its gate-voltage dependence show that the bulk molecular orientation at RSCs' interfaces is preserved without forming deep trapping levels, which demonstrate that organic interfaces in RSC-EDLTs are clean and undamaged under a strong electric field in EDLTs.",

author = "Yuki Takahashi and Masaki Tsuji and Yohei Yomogida and Taishi Takenobu and Yoshihiro Iwasa and Kazuhiro Marumoto",

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T1 - Electron spin resonance study of organic interfaces in ion gel-gated rubrene single-crystal transistors

AU - Takahashi, Yuki

AU - Tsuji, Masaki

AU - Yomogida, Yohei

AU - Takenobu, Taishi

AU - Iwasa, Yoshihiro

AU - Marumoto, Kazuhiro

PY - 2013/4

Y1 - 2013/4

N2 - Organic interfaces of rubrene single crystals (RSCs) in ion gel-gated electric double-layer transistors (EDLTs) were investigated by electron spin resonance (ESR). The EDLTs were fabricated by laminating ion-gel films onto RSCs. Clear ESR signals due to field-injected holes in RSCs were successfully observed at low gate voltages, showing a high spin concentration due to the high capacitance of EDLTs. The analyses of anisotropic ESR signals and its gate-voltage dependence show that the bulk molecular orientation at RSCs' interfaces is preserved without forming deep trapping levels, which demonstrate that organic interfaces in RSC-EDLTs are clean and undamaged under a strong electric field in EDLTs.

AB - Organic interfaces of rubrene single crystals (RSCs) in ion gel-gated electric double-layer transistors (EDLTs) were investigated by electron spin resonance (ESR). The EDLTs were fabricated by laminating ion-gel films onto RSCs. Clear ESR signals due to field-injected holes in RSCs were successfully observed at low gate voltages, showing a high spin concentration due to the high capacitance of EDLTs. The analyses of anisotropic ESR signals and its gate-voltage dependence show that the bulk molecular orientation at RSCs' interfaces is preserved without forming deep trapping levels, which demonstrate that organic interfaces in RSC-EDLTs are clean and undamaged under a strong electric field in EDLTs.

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Electron spin resonance study of organic interfaces in ion gel-gated rubrene single-crystal transistors

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