We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)