Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa

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    Abstract

    We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

    Original languageEnglish
    Article number183304
    JournalApplied Physics Letters
    Volume96
    Issue number18
    DOIs
    Publication statusPublished - 2010

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Bisri, S. Z., Takenobu, T., Takahashi, T., & Iwasa, Y. (2010). Electron transport in rubrene single-crystal transistors. Applied Physics Letters, 96(18), [183304]. https://doi.org/10.1063/1.3419899