Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa

    Research output: Contribution to journal › Article

    42 Citations (Scopus)

    Abstract

    We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

    Original languageEnglish
    Article number183304
    JournalApplied Physics Letters
    Volume96
    Issue number18
    DOIs
    Publication statusPublished - 2010

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    electron mobility
    transistors
    gloves
    single crystals
    hole mobility
    organic semiconductors
    carrier mobility
    purification
    boxes
    electrons
    impurities

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Bisri, S. Z., Takenobu, T., Takahashi, T., & Iwasa, Y. (2010). Electron transport in rubrene single-crystal transistors. Applied Physics Letters, 96(18), [183304]. https://doi.org/10.1063/1.3419899

    Electron transport in rubrene single-crystal transistors. / Bisri, Satria Zulkarnaen; Takenobu, Taishi; Takahashi, Tetsuo; Iwasa, Yoshihiro.

    In: Applied Physics Letters, Vol. 96, No. 18, 183304, 2010.

    Research output: Contribution to journal › Article

    Bisri, SZ, Takenobu, T, Takahashi, T & Iwasa, Y 2010, 'Electron transport in rubrene single-crystal transistors', Applied Physics Letters, vol. 96, no. 18, 183304. https://doi.org/10.1063/1.3419899
    Bisri SZ, Takenobu T, Takahashi T, Iwasa Y. Electron transport in rubrene single-crystal transistors. Applied Physics Letters. 2010;96(18). 183304. https://doi.org/10.1063/1.3419899
    Bisri, Satria Zulkarnaen ; Takenobu, Taishi ; Takahashi, Tetsuo ; Iwasa, Yoshihiro. / Electron transport in rubrene single-crystal transistors. In: Applied Physics Letters. 2010 ; Vol. 96, No. 18.
    @article{4b2fba21c2c54baf90f98a8307cfa24f,
    title = "Electron transport in rubrene single-crystal transistors",
    abstract = "We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.",
    author = "Bisri, {Satria Zulkarnaen} and Taishi Takenobu and Tetsuo Takahashi and Yoshihiro Iwasa",
    year = "2010",
    doi = "10.1063/1.3419899",
    language = "English",
    volume = "96",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "18",

    }

    TY - JOUR

    T1 - Electron transport in rubrene single-crystal transistors

    AU - Bisri, Satria Zulkarnaen

    AU - Takenobu, Taishi

    AU - Takahashi, Tetsuo

    AU - Iwasa, Yoshihiro

    PY - 2010

    Y1 - 2010

    N2 - We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

    AB - We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

    UR - http://www.scopus.com/inward/record.url?scp=77952856146&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77952856146&partnerID=8YFLogxK

    U2 - 10.1063/1.3419899

    DO - 10.1063/1.3419899

    M3 - Article

    AN - SCOPUS:77952856146

    VL - 96

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 18

    M1 - 183304

    ER -

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