Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri; Taishi Takenobu; Tetsuo Takahashi; Yoshihiro Iwasa

doi:10.1063/1.3419899

Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm² /V s is achieved by performing multiple purifications of single crystals and device aging inside an N₂ -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

Original language	English
Article number	183304
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3419899
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3419899

Cite this

@article{4b2fba21c2c54baf90f98a8307cfa24f,

title = "Electron transport in rubrene single-crystal transistors",

abstract = "We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.",

author = "Bisri, {Satria Zulkarnaen} and Taishi Takenobu and Tetsuo Takahashi and Yoshihiro Iwasa",

year = "2010",

doi = "10.1063/1.3419899",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Electron transport in rubrene single-crystal transistors

AU - Bisri, Satria Zulkarnaen

AU - Takenobu, Taishi

AU - Takahashi, Tetsuo

AU - Iwasa, Yoshihiro

PY - 2010

Y1 - 2010

N2 - We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

AB - We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2 /V s is achieved by performing multiple purifications of single crystals and device aging inside an N2 -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

UR - http://www.scopus.com/inward/record.url?scp=77952856146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952856146&partnerID=8YFLogxK

U2 - 10.1063/1.3419899

DO - 10.1063/1.3419899

M3 - Article

AN - SCOPUS:77952856146

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 183304

ER -

Electron transport in rubrene single-crystal transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this