Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri; Taishi Takenobu; Tetsuo Takahashi; Yoshihiro Iwasa

doi:10.1063/1.3419899

Electron transport in rubrene single-crystal transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa

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42 Citations (Scopus)

Abstract

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm² /V s is achieved by performing multiple purifications of single crystals and device aging inside an N₂ -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.

Original language	English
Article number	183304
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3419899
Publication status	Published - 2010

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Bisri, S. Z., Takenobu, T., Takahashi, T., & Iwasa, Y. (2010). Electron transport in rubrene single-crystal transistors. Applied Physics Letters, 96(18), [183304]. https://doi.org/10.1063/1.3419899

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10.1063/1.3419899