Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

C. X. Wang, K. Tsubaki, N. Kobayashi, Toshiki Makimoto, N. Maeda

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.

Original languageEnglish
Pages (from-to)2313-2315
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number13
DOIs
Publication statusPublished - 2004 Mar 29
Externally publishedYes

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vapor phase epitaxy
transport properties
gas density
electron gas
Hall effect
x ray diffraction
electrons
roughness
disorders
scattering
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy. / Wang, C. X.; Tsubaki, K.; Kobayashi, N.; Makimoto, Toshiki; Maeda, N.

In: Applied Physics Letters, Vol. 84, No. 13, 29.03.2004, p. 2313-2315.

Research output: Contribution to journalArticle

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AU - Maeda, N.

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