Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

C. X. Wang; K. Tsubaki; N. Kobayashi; T. Makimoto; N. Maeda

doi:10.1063/1.1690879

Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

C. X. Wang^*, K. Tsubaki, N. Kobayashi, T. Makimoto, N. Maeda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.

Original language	English
Pages (from-to)	2313-2315
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1690879
Publication status	Published - 2004 Mar 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1690879

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abstract = "A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.",

author = "Wang, {C. X.} and K. Tsubaki and N. Kobayashi and T. Makimoto and N. Maeda",

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T1 - Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

AU - Wang, C. X.

AU - Tsubaki, K.

AU - Kobayashi, N.

AU - Makimoto, T.

AU - Maeda, N.

PY - 2004/3/29

Y1 - 2004/3/29

N2 - A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.

AB - A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.

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Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

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