Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

C. X. Wang, K. Tsubaki, N. Kobayashi, T. Makimoto, N. Maeda

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A study of the electron transport properties in AlGaN/InGaN/GaN double heterostructures (DH) was presented. Metalorganic vapor phase epitaxy (MOVPE) was used for growing the DH samples. The x-ray diffraction and variable temperature Hall effect measurements were used for the study. It was observed that the DHs showed much higher two-dimensional electron gas density of up to 50% than in a typical AlGaN/GaN structure. The impact of alloy disorder and interface roughness scattering on the electron transport properties of AlGaN/InGaN/GaN DHs were also discussed.

Original languageEnglish
Pages (from-to)2313-2315
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2004 Mar 29


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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