Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy

Chengxin Wang, Narihiko Maeda, Kotaro Tsubaki, Naoki Kobayashi, Toshiki Makimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electronic properties of Si-doped InGaN thin films with different In compositions were investigated. The samples were grown by metalorganic vapor phase epitaxy (MOVPE), and then evaluated using photoluminescence, X-ray diffraction and variable temperature Hall effect measurements. The Si donor activation energy was found to decrease with the increase in In composition of InGaN as a result of shrinking bandbap energy, and determined to be 17 meV, 10 meV and 6 meV for 4%, 9% and 13% of In compositions through the least square fitting of experimental carrier concentrations versus temperatures. InGaN alloy with 9% of In composition exhibited the best electronic properties with the lowest compensation ratio and the highest mobilities among those three samples over the whole range of measurement temperature. The relatively high mobility of 227 cm2/Vs at room temperature was achieved in this sample. Scattering mechanism in InGaN alloy was also studied using a simple model.

Original languageEnglish
Pages (from-to)3356-3359
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number6 A
Publication statusPublished - 2004 Jun
Externally publishedYes

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Electron transport properties
Metallorganic vapor phase epitaxy
vapor phase epitaxy
transport properties
Chemical analysis
Electronic properties
electrons
Hall effect
electronics
Temperature measurement
Temperature
Carrier concentration
temperature measurement
Photoluminescence
Activation energy
Scattering
activation energy
photoluminescence
X ray diffraction
Thin films

Keywords

  • Activation energy
  • Hall effect
  • InGaN
  • Mobility

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy. / Wang, Chengxin; Maeda, Narihiko; Tsubaki, Kotaro; Kobayashi, Naoki; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 6 A, 06.2004, p. 3356-3359.

Research output: Contribution to journalArticle

@article{c29e243d99a9405ca5e1877b304d6c12,
title = "Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy",
abstract = "The electronic properties of Si-doped InGaN thin films with different In compositions were investigated. The samples were grown by metalorganic vapor phase epitaxy (MOVPE), and then evaluated using photoluminescence, X-ray diffraction and variable temperature Hall effect measurements. The Si donor activation energy was found to decrease with the increase in In composition of InGaN as a result of shrinking bandbap energy, and determined to be 17 meV, 10 meV and 6 meV for 4{\%}, 9{\%} and 13{\%} of In compositions through the least square fitting of experimental carrier concentrations versus temperatures. InGaN alloy with 9{\%} of In composition exhibited the best electronic properties with the lowest compensation ratio and the highest mobilities among those three samples over the whole range of measurement temperature. The relatively high mobility of 227 cm2/Vs at room temperature was achieved in this sample. Scattering mechanism in InGaN alloy was also studied using a simple model.",
keywords = "Activation energy, Hall effect, InGaN, Mobility",
author = "Chengxin Wang and Narihiko Maeda and Kotaro Tsubaki and Naoki Kobayashi and Toshiki Makimoto",
year = "2004",
month = "6",
language = "English",
volume = "43",
pages = "3356--3359",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 A",

}

TY - JOUR

T1 - Electron transport properties in lightly Si-doped InGaN films grown by metalorganic vapor phase epitaxy

AU - Wang, Chengxin

AU - Maeda, Narihiko

AU - Tsubaki, Kotaro

AU - Kobayashi, Naoki

AU - Makimoto, Toshiki

PY - 2004/6

Y1 - 2004/6

N2 - The electronic properties of Si-doped InGaN thin films with different In compositions were investigated. The samples were grown by metalorganic vapor phase epitaxy (MOVPE), and then evaluated using photoluminescence, X-ray diffraction and variable temperature Hall effect measurements. The Si donor activation energy was found to decrease with the increase in In composition of InGaN as a result of shrinking bandbap energy, and determined to be 17 meV, 10 meV and 6 meV for 4%, 9% and 13% of In compositions through the least square fitting of experimental carrier concentrations versus temperatures. InGaN alloy with 9% of In composition exhibited the best electronic properties with the lowest compensation ratio and the highest mobilities among those three samples over the whole range of measurement temperature. The relatively high mobility of 227 cm2/Vs at room temperature was achieved in this sample. Scattering mechanism in InGaN alloy was also studied using a simple model.

AB - The electronic properties of Si-doped InGaN thin films with different In compositions were investigated. The samples were grown by metalorganic vapor phase epitaxy (MOVPE), and then evaluated using photoluminescence, X-ray diffraction and variable temperature Hall effect measurements. The Si donor activation energy was found to decrease with the increase in In composition of InGaN as a result of shrinking bandbap energy, and determined to be 17 meV, 10 meV and 6 meV for 4%, 9% and 13% of In compositions through the least square fitting of experimental carrier concentrations versus temperatures. InGaN alloy with 9% of In composition exhibited the best electronic properties with the lowest compensation ratio and the highest mobilities among those three samples over the whole range of measurement temperature. The relatively high mobility of 227 cm2/Vs at room temperature was achieved in this sample. Scattering mechanism in InGaN alloy was also studied using a simple model.

KW - Activation energy

KW - Hall effect

KW - InGaN

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=4344591723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344591723&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4344591723

VL - 43

SP - 3356

EP - 3359

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -