Electronic excitation in impact scattering of low-energy He+ from solid surfaces

R. Souda, T. Aizawa, C. Oshima, S. Otani, Y. Ishizawa

    Research output: Contribution to journalArticle

    53 Citations (Scopus)

    Abstract

    Inelastic scattering and electron-exchange processes in low-energy (0.11 keV) He+ scattering from surfaces of ionic compounds and metallic elements have been investigated. The probability for ionization of neutral He0 in the ground state is minimized for target elements which have filled d orbitals located in a shallower energy position than the He 1s level. Inelastic scattering other than reionization of He0 is also clearly observed in the spectra from a large number of ionic compounds. These excitations are observed provided that the surface p levels are located at lower energies than the He 1s level and that ionization of He0 takes place with a large probability. On the basis of the quasimolecular framework, it is found that the inelastic scattering is caused by excitation of surface p electrons along the orbital, which is promoted due to the antibonding interaction with the He 1s orbital. The quantum-mechanical interference between bonding and antibonding orbitals, which results in oscillatory-yield versus kinetic-energy curves because of the quasiresonant charge exchange, is found to be broken down by the intervening occurrence of the inelastic process.

    Original languageEnglish
    Pages (from-to)4119-4131
    Number of pages13
    JournalPhysical Review B
    Volume40
    Issue number6
    DOIs
    Publication statusPublished - 1989

    Fingerprint

    Inelastic scattering
    solid surfaces
    Scattering
    orbitals
    inelastic scattering
    Ionization
    scattering
    electronics
    excitation
    Electrons
    Kinetic energy
    ionization
    Ground state
    energy
    charge exchange
    electrons
    kinetic energy
    occurrences
    interference
    ground state

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Electronic excitation in impact scattering of low-energy He+ from solid surfaces. / Souda, R.; Aizawa, T.; Oshima, C.; Otani, S.; Ishizawa, Y.

    In: Physical Review B, Vol. 40, No. 6, 1989, p. 4119-4131.

    Research output: Contribution to journalArticle

    Souda, R, Aizawa, T, Oshima, C, Otani, S & Ishizawa, Y 1989, 'Electronic excitation in impact scattering of low-energy He+ from solid surfaces', Physical Review B, vol. 40, no. 6, pp. 4119-4131. https://doi.org/10.1103/PhysRevB.40.4119
    Souda, R. ; Aizawa, T. ; Oshima, C. ; Otani, S. ; Ishizawa, Y. / Electronic excitation in impact scattering of low-energy He+ from solid surfaces. In: Physical Review B. 1989 ; Vol. 40, No. 6. pp. 4119-4131.
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    abstract = "Inelastic scattering and electron-exchange processes in low-energy (0.11 keV) He+ scattering from surfaces of ionic compounds and metallic elements have been investigated. The probability for ionization of neutral He0 in the ground state is minimized for target elements which have filled d orbitals located in a shallower energy position than the He 1s level. Inelastic scattering other than reionization of He0 is also clearly observed in the spectra from a large number of ionic compounds. These excitations are observed provided that the surface p levels are located at lower energies than the He 1s level and that ionization of He0 takes place with a large probability. On the basis of the quasimolecular framework, it is found that the inelastic scattering is caused by excitation of surface p electrons along the orbital, which is promoted due to the antibonding interaction with the He 1s orbital. The quantum-mechanical interference between bonding and antibonding orbitals, which results in oscillatory-yield versus kinetic-energy curves because of the quasiresonant charge exchange, is found to be broken down by the intervening occurrence of the inelastic process.",
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    AU - Souda, R.

    AU - Aizawa, T.

    AU - Oshima, C.

    AU - Otani, S.

    AU - Ishizawa, Y.

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    N2 - Inelastic scattering and electron-exchange processes in low-energy (0.11 keV) He+ scattering from surfaces of ionic compounds and metallic elements have been investigated. The probability for ionization of neutral He0 in the ground state is minimized for target elements which have filled d orbitals located in a shallower energy position than the He 1s level. Inelastic scattering other than reionization of He0 is also clearly observed in the spectra from a large number of ionic compounds. These excitations are observed provided that the surface p levels are located at lower energies than the He 1s level and that ionization of He0 takes place with a large probability. On the basis of the quasimolecular framework, it is found that the inelastic scattering is caused by excitation of surface p electrons along the orbital, which is promoted due to the antibonding interaction with the He 1s orbital. The quantum-mechanical interference between bonding and antibonding orbitals, which results in oscillatory-yield versus kinetic-energy curves because of the quasiresonant charge exchange, is found to be broken down by the intervening occurrence of the inelastic process.

    AB - Inelastic scattering and electron-exchange processes in low-energy (0.11 keV) He+ scattering from surfaces of ionic compounds and metallic elements have been investigated. The probability for ionization of neutral He0 in the ground state is minimized for target elements which have filled d orbitals located in a shallower energy position than the He 1s level. Inelastic scattering other than reionization of He0 is also clearly observed in the spectra from a large number of ionic compounds. These excitations are observed provided that the surface p levels are located at lower energies than the He 1s level and that ionization of He0 takes place with a large probability. On the basis of the quasimolecular framework, it is found that the inelastic scattering is caused by excitation of surface p electrons along the orbital, which is promoted due to the antibonding interaction with the He 1s orbital. The quantum-mechanical interference between bonding and antibonding orbitals, which results in oscillatory-yield versus kinetic-energy curves because of the quasiresonant charge exchange, is found to be broken down by the intervening occurrence of the inelastic process.

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