Electronic Raman scattering in filling-controlled metals: Sr1-xLaxTiO3

Takuro Katsufuji, Y. Tokura

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Electronic Raman scattering has been investigated for metallic Sr1-xLaxTiO3 in which the 3d band filling (x) can be systematically changed from x=0 (a band insulator) to x=1 (a Mott-Hubbard insulator). The symmetry dependence of the scattering intensity can be accounted for in terms of the neutral carrier density fluctuation model. However, a systematic change of the spectral shape with the carrier density (x) is observed. All the spectra can be reproduced by a relaxational function with an ω-dependent scattering rate (Γ). The ω dependence of Γ gets stronger with x, which is in accord with the x-dependent enhancement of the effective mass, due to the electron correaltion effect.

Original languageEnglish
Pages (from-to)4372-4375
Number of pages4
JournalPhysical Review B
Volume49
Issue number6
DOIs
Publication statusPublished - 1994
Externally publishedYes

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Carrier concentration
Raman scattering
Metals
insulators
Scattering
Raman spectra
scattering
electronics
metals
Electrons
augmentation
symmetry
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic Raman scattering in filling-controlled metals : Sr1-xLaxTiO3. / Katsufuji, Takuro; Tokura, Y.

In: Physical Review B, Vol. 49, No. 6, 1994, p. 4372-4375.

Research output: Contribution to journalArticle

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