Electronic state formation by surface atom removal on a MoS 2 surface

Nagisa Kodama, Tsuyoshi Hasegawa, Tohru Tsuruoka, Christian Joachim, Masakazu Aono

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.

Original languageEnglish
Article number06FF07
JournalJapanese Journal of Applied Physics
Volume51
Issue number6 PART 2
DOIs
Publication statusPublished - 2012 Jun
Externally publishedYes

Fingerprint

Electronic states
sulfur
Sulfur
Atoms
electronics
atoms
Vacancies
Energy gap
Scanning
scanning
Microscopes
microscopes
Spectroscopy
Electric potential
electric potential
spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electronic state formation by surface atom removal on a MoS 2 surface. / Kodama, Nagisa; Hasegawa, Tsuyoshi; Tsuruoka, Tohru; Joachim, Christian; Aono, Masakazu.

In: Japanese Journal of Applied Physics, Vol. 51, No. 6 PART 2, 06FF07, 06.2012.

Research output: Contribution to journalArticle

Kodama, Nagisa ; Hasegawa, Tsuyoshi ; Tsuruoka, Tohru ; Joachim, Christian ; Aono, Masakazu. / Electronic state formation by surface atom removal on a MoS 2 surface. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 6 PART 2.
@article{1635dc8fc4474cddb4c2e99978312669,
title = "Electronic state formation by surface atom removal on a MoS 2 surface",
abstract = "Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.",
author = "Nagisa Kodama and Tsuyoshi Hasegawa and Tohru Tsuruoka and Christian Joachim and Masakazu Aono",
year = "2012",
month = "6",
doi = "10.1143/JJAP.51.06FF07",
language = "English",
volume = "51",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 PART 2",

}

TY - JOUR

T1 - Electronic state formation by surface atom removal on a MoS 2 surface

AU - Kodama, Nagisa

AU - Hasegawa, Tsuyoshi

AU - Tsuruoka, Tohru

AU - Joachim, Christian

AU - Aono, Masakazu

PY - 2012/6

Y1 - 2012/6

N2 - Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.

AB - Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.

UR - http://www.scopus.com/inward/record.url?scp=84863310358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863310358&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.06FF07

DO - 10.1143/JJAP.51.06FF07

M3 - Article

AN - SCOPUS:84863310358

VL - 51

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 PART 2

M1 - 06FF07

ER -