Electronic states of sulfur vacancies formed on a MoS2 surface

Nagisa Kodama, Tsuyoshi Hasegawa, Yuji Okawa, Tohru Tsuruoka, Christian Joachim, Masakazu Aono

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Sulfur vacancies formed on a MoS2 surface have been predicted to have electronic states at the Fermi level, and to work as conductive atomic scale structures. We made sulfur vacancies on a MoS2 surface by removing sulfur atoms using scanning tunneling microscopy (STM) induced field evaporation, and measured the current-voltage (I/V) characteristics of the vacancies. The I/V curve measured at the vacancies showed a linear increase at a zero bias region, indicating the existence of electronic states at the Fermi level. On the other hand, the I/V curve measured at a clean surface showed a gap of about 1 eV around the Fermi level, as was expected from the theoretical calculation. We also successfully carried out manipulation of Au nanoislands, which will be used as nanopads to be connected to a sulfur vacancy chain.

Original languageEnglish
Article number08LB01
JournalJapanese Journal of Applied Physics
Volume49
Issue number8 PART 4
DOIs
Publication statusPublished - 2010 Aug
Externally publishedYes

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Electronic states
Vacancies
sulfur
Sulfur
Fermi level
electronics
Scanning tunneling microscopy
curves
scanning tunneling microscopy
manipulators
Evaporation
evaporation
Atoms
Electric potential
electric potential
atoms

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electronic states of sulfur vacancies formed on a MoS2 surface. / Kodama, Nagisa; Hasegawa, Tsuyoshi; Okawa, Yuji; Tsuruoka, Tohru; Joachim, Christian; Aono, Masakazu.

In: Japanese Journal of Applied Physics, Vol. 49, No. 8 PART 4, 08LB01, 08.2010.

Research output: Contribution to journalArticle

Kodama, Nagisa ; Hasegawa, Tsuyoshi ; Okawa, Yuji ; Tsuruoka, Tohru ; Joachim, Christian ; Aono, Masakazu. / Electronic states of sulfur vacancies formed on a MoS2 surface. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 8 PART 4.
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