Electronic structure analysis of Sb-doped BaSnO3

Daisuke Yamashita*, Satoru Takefuji, Masato Tsubomoto, Tomoyuki Yamamoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.

Original languageEnglish
Pages (from-to)33-36
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 2010 Jan 1


  • Antimony
  • BaSnO
  • Electronic structure
  • First-principles calculation
  • Photoemission yield spectroscopy
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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