Abstract
Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.
| Original language | English |
|---|---|
| Pages (from-to) | 33-36 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 173 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2010 |
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Keywords
- Antimony
- BaSnO
- Electronic structure
- First-principles calculation
- Photoemission yield spectroscopy
- Transparent conducting oxide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Electronic structure analysis of Sb-doped BaSnO3 . / Yamashita, Daisuke; Takefuji, Satoru; Tsubomoto, Masato; Yamamoto, Tomoyuki.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 173, No. 1-3, 2010, p. 33-36.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electronic structure analysis of Sb-doped BaSnO3
AU - Yamashita, Daisuke
AU - Takefuji, Satoru
AU - Tsubomoto, Masato
AU - Yamamoto, Tomoyuki
PY - 2010
Y1 - 2010
N2 - Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.
AB - Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.
KW - Antimony
KW - BaSnO
KW - Electronic structure
KW - First-principles calculation
KW - Photoemission yield spectroscopy
KW - Transparent conducting oxide
UR - http://www.scopus.com/inward/record.url?scp=77956263139&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956263139&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2009.10.025
DO - 10.1016/j.mseb.2009.10.025
M3 - Article
AN - SCOPUS:77956263139
VL - 173
SP - 33
EP - 36
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -