Electronic structure analysis of Sb-doped BaSnO3

Daisuke Yamashita; Satoru Takefuji; Masato Tsubomoto; Tomoyuki Yamamoto

doi:10.1016/j.mseb.2009.10.025

Electronic structure analysis of Sb-doped BaSnO₃

Daisuke Yamashita, Satoru Takefuji, Masato Tsubomoto, Tomoyuki Yamamoto

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Sb-doped BaSnO₃ is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO₃, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO₃ due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO₃ by Sb-doping, which supports the PYS results.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	173
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2009.10.025
Publication status	Published - 2010 Jan 1

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Keywords

Antimony
BaSnO
Electronic structure
First-principles calculation
Photoemission yield spectroscopy
Transparent conducting oxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Yamashita, D., Takefuji, S., Tsubomoto, M., & Yamamoto, T. (2010). Electronic structure analysis of Sb-doped BaSnO₃. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 173(1-3), 33-36. https://doi.org/10.1016/j.mseb.2009.10.025

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10.1016/j.mseb.2009.10.025