Electronic structure analysis of Sb-doped BaSnO3

Daisuke Yamashita; Satoru Takefuji; Masato Tsubomoto; Tomoyuki Yamamoto

doi:10.1016/j.mseb.2009.10.025

Electronic structure analysis of Sb-doped BaSnO₃

Daisuke Yamashita, Satoru Takefuji, Masato Tsubomoto, Tomoyuki Yamamoto

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Sb-doped BaSnO₃ is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO₃, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO₃ due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO₃ by Sb-doping, which supports the PYS results.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	173
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2009.10.025
Publication status	Published - 2010 Jan 1

Keywords

Antimony
BaSnO
Electronic structure
First-principles calculation
Photoemission yield spectroscopy
Transparent conducting oxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2009.10.025

Fingerprint Dive into the research topics of 'Electronic structure analysis of Sb-doped BaSnO<sub>3</sub>'. Together they form a unique fingerprint.

Cite this

@article{4e19961e2dc14f57a959ce1b5a058f09,

title = "Electronic structure analysis of Sb-doped BaSnO3",

abstract = "Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.",

keywords = "Antimony, BaSnO, Electronic structure, First-principles calculation, Photoemission yield spectroscopy, Transparent conducting oxide",

author = "Daisuke Yamashita and Satoru Takefuji and Masato Tsubomoto and Tomoyuki Yamamoto",

year = "2010",

month = jan,

day = "1",

doi = "10.1016/j.mseb.2009.10.025",

language = "English",

volume = "173",

pages = "33--36",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Electronic structure analysis of Sb-doped BaSnO3

AU - Yamashita, Daisuke

AU - Takefuji, Satoru

AU - Tsubomoto, Masato

AU - Yamamoto, Tomoyuki

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.

AB - Sb-doped BaSnO3 is synthesized by the conventional solid-state reaction method changing a concentration of Sb. Electric resistivity of synthesized specimens decreases with increment of doped Sb concentration. In order to investigate an influence of Sb-doping on the electronic structure of BaSnO3, its valence band electronic structure is examined by the photoemission yield spectroscopy (PYS), which shows additional occupied band above the top of the valence band of BaSnO3 due to the Sb-doping. First-principles calculations are also carried out to obtain change in electronic structures of BaSnO3 by Sb-doping, which supports the PYS results.

KW - Antimony

KW - BaSnO

KW - Electronic structure

KW - First-principles calculation

KW - Photoemission yield spectroscopy

KW - Transparent conducting oxide

UR - http://www.scopus.com/inward/record.url?scp=77956263139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956263139&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2009.10.025

DO - 10.1016/j.mseb.2009.10.025

M3 - Article

AN - SCOPUS:77956263139

VL - 173

SP - 33

EP - 36

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -