Electronic structure of 3d transition-metal impurities in semiconductors

Takashi Mizokawa, Atsushi Fujimori

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using the cluster and Anderson impurity models with configuration interaction. It is shown that both systematic chemical trends and multiplet effects are essential to explain the variations of the donor and acceptor levels with transition-metal elements.

Original languageEnglish
Pages (from-to)417-418
Number of pages2
JournalJapanese Journal of Applied Physics
Volume32
Issue numberS3
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Electronic structure
Transition metals
transition metals
Impurities
Semiconductor materials
electronic structure
impurities
Ionization potential
Photoemission
Chemical elements
Light absorption
configuration interaction
optical spectrum
Absorption spectra
optical absorption
photoelectric emission
fine structure
absorption spectra
trends
ionization

Keywords

  • 3d transition-metal impurity in semiconductor
  • D-d optical absorption
  • Donor and acceptor levels
  • Electronic structure
  • Photoemission

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Electronic structure of 3d transition-metal impurities in semiconductors. / Mizokawa, Takashi; Fujimori, Atsushi.

In: Japanese Journal of Applied Physics, Vol. 32, No. S3, 1993, p. 417-418.

Research output: Contribution to journalArticle

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