Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy

J. Okabayashi; A. Kimura; O. Rader; T. Mizokawa; A. Fujimori; T. Hayashi; M. Tanaka

doi:10.1016/S1386-9477(01)00080-7

Electronic structure of Ga_1-xMn_xAs studied by angle-resolved photoemission spectroscopy

J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

40 Citations (Scopus)

Abstract

We have studied the electronic structure of Ga_1-xMn_xAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga_1-xMn_xAs.

Original language	English
Pages (from-to)	192-195
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	10
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(01)00080-7
Publication status	Published - 2001 May 1

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Keywords

Density of states
Energy-band dispersion
GaMnAs
Photoemission spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Cite this

Okabayashi, J., Kimura, A., Rader, O., Mizokawa, T., Fujimori, A., Hayashi, T., & Tanaka, M. (2001). Electronic structure of Ga_1-xMn_xAs studied by angle-resolved photoemission spectroscopy. Physica E: Low-Dimensional Systems and Nanostructures, 10(1-3), 192-195. https://doi.org/10.1016/S1386-9477(01)00080-7

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AU - Rader, O.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Hayashi, T.

AU - Tanaka, M.

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AB - We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.

KW - Density of states

KW - Energy-band dispersion

KW - GaMnAs

KW - Photoemission spectroscopy

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10.1016/S1386-9477(01)00080-7