Abstract
We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.
| Original language | English |
|---|---|
| Pages (from-to) | 192-195 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 10 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2001 May 1 |
| Externally published | Yes |
Keywords
- Density of states
- Energy-band dispersion
- GaMnAs
- Photoemission spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
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Okabayashi, J., Kimura, A., Rader, O., Mizokawa, T., Fujimori, A., Hayashi, T., & Tanaka, M. (2001). Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy. Physica E: Low-Dimensional Systems and Nanostructures, 10(1-3), 192-195. https://doi.org/10.1016/S1386-9477(01)00080-7