Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy

J. Okabayashi, A. Kimura, O. Rader, Takashi Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume10
Issue number1-3
DOIs
Publication statusPublished - 2001 May
Externally publishedYes

Fingerprint

Photoelectron spectroscopy
Valence bands
Fermi level
Transport properties
Electronic structure
photoelectric emission
transport properties
Doping (additives)
electronic structure
valence
spectroscopy
gallium arsenide

Keywords

  • Density of states
  • Energy-band dispersion
  • GaMnAs
  • Photoemission spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy. / Okabayashi, J.; Kimura, A.; Rader, O.; Mizokawa, Takashi; Fujimori, A.; Hayashi, T.; Tanaka, M.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 10, No. 1-3, 05.2001, p. 192-195.

Research output: Contribution to journalArticle

Okabayashi, J. ; Kimura, A. ; Rader, O. ; Mizokawa, Takashi ; Fujimori, A. ; Hayashi, T. ; Tanaka, M. / Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy. In: Physica E: Low-Dimensional Systems and Nanostructures. 2001 ; Vol. 10, No. 1-3. pp. 192-195.
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