Electronic structure of in the vicinity of the superconductor-insulator transition

A. Ino, C. Kim, M. Nakamura, T. Yoshida, T. Mizokawa, Z. Shen, A. Fujimori, T. Kakeshita, H. Eisaki, S. Uchida

Research output: Contribution to journalArticle

174 Citations (Scopus)

Abstract

We report on the result of angle-resolved photoemission study of (Formula presented) (LSCO) from an optimally doped superconductor (Formula presented) to an antiferromagnetic insulator (Formula presented) Near the superconductor-insulator transition (Formula presented) spectral weight is transferred with hole doping between two coexisting components, suggesting a microscopic inhomogeneity of the doped-hole distribution. For the underdoped LSCO (Formula presented) the dispersive band crossing the Fermi level becomes invisible in the (Formula presented) direction unlike (Formula presented) These observations may be reconciled with the evolution of holes in the insulator into fluctuating stripes in the superconductor.

Original languageEnglish
Pages (from-to)4137-4141
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number6
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Ino, A., Kim, C., Nakamura, M., Yoshida, T., Mizokawa, T., Shen, Z., Fujimori, A., Kakeshita, T., Eisaki, H., & Uchida, S. (2000). Electronic structure of in the vicinity of the superconductor-insulator transition. Physical Review B - Condensed Matter and Materials Physics, 62(6), 4137-4141. https://doi.org/10.1103/PhysRevB.62.4137