Electronic structure of InN observed by Shubnikov-de Haas measurements

T. Inushima, M. Higashiwaki, T. Matsui, T. Takenobu, M. Motokawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We investigated the electronic structure of degenerated InN by Shubnikov-de Haas (SdH) measurements for the first time. The SdH oscillation depends on the angle between the crystal c-axis and the applied field and has two components; one originates from the spherical Fermi surface with effective mass of about 0.085 m0, the other from the layered structure spread in the a-b plane. In the case of Sidoped InN with the carrier density of 2.5×10 18 cm -3, about half electron density exists on the a-b plane.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2822-2825
Number of pages4
Edition7
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period03/5/2503/5/30

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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  • Cite this

    Inushima, T., Higashiwaki, M., Matsui, T., Takenobu, T., & Motokawa, M. (2003). Electronic structure of InN observed by Shubnikov-de Haas measurements. In Physica Status Solidi C: Conferences (7 ed., pp. 2822-2825) https://doi.org/10.1002/pssc.200303461