Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs

J. Okabayashi; T. Mizokawa; D. D. Sarma; A. Fujimori; T. Slupinski; A. Oiwa; H. Munekata

Electronic structure of In_1-xMn_xAs studied by photoemission spectroscopy: Comparison with Ga_1-xMn_xAs

J. Okabayashi, T. Mizokawa, D. D. Sarma, A. Fujimori, T. Slupinski, A. Oiwa, H. Munekata

Research output: Contribution to journal › Article

Abstract

We have investigated the electronic structure of the p-type diluted magnetic semiconductor In_1-xMn_xAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga_1-xMn_xAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga_1-xMn_xAs. This difference would explain the difference in transport, magnetic and optical properties of In_1-xMn_xAs and Ga_1-xMn_xAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In_1-xMn_xAs than in Ga_1-xMn_xAs.

Original language	English
Article number	161203
Pages (from-to)	1612031-1612034
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	16
Publication status	Published - 2002 Apr 15
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Electronic structure of In_1-xMn_xAs studied by photoemission spectroscopy : Comparison with Ga_1-xMn_xAs. / Okabayashi, J.; Mizokawa, T.; Sarma, D. D.; Fujimori, A.; Slupinski, T.; Oiwa, A.; Munekata, H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 16, 161203, 15.04.2002, p. 1612031-1612034.

Research output: Contribution to journal › Article

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abstract = "We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.",

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AU - Okabayashi, J.

AU - Mizokawa, T.

AU - Sarma, D. D.

AU - Fujimori, A.

AU - Slupinski, T.

AU - Oiwa, A.

AU - Munekata, H.

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N2 - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

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