Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs

J. Okabayashi, T. Mizokawa, D. D. Sarma, A. Fujimori, T. Slupinski, A. Oiwa, H. Munekata

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Abstract

We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

Original languageEnglish
Article number161203
Pages (from-to)1612031-1612034
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number16
Publication statusPublished - 2002 Apr 15

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Okabayashi, J., Mizokawa, T., Sarma, D. D., Fujimori, A., Slupinski, T., Oiwa, A., & Munekata, H. (2002). Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs. Physical Review B - Condensed Matter and Materials Physics, 65(16), 1612031-1612034. [161203].