Abstract
We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.
| Original language | English |
|---|---|
| Article number | 161203 |
| Pages (from-to) | 1612031-1612034 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 16 |
| Publication status | Published - 2002 Apr 15 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Electronic structure of In1-xMnxAs studied by photoemission spectroscopy : Comparison with Ga1-xMnxAs. / Okabayashi, J.; Mizokawa, Takashi; Sarma, D. D.; Fujimori, A.; Slupinski, T.; Oiwa, A.; Munekata, H.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 16, 161203, 15.04.2002, p. 1612031-1612034.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Electronic structure of In1-xMnxAs studied by photoemission spectroscopy
T2 - Comparison with Ga1-xMnxAs
AU - Okabayashi, J.
AU - Mizokawa, Takashi
AU - Sarma, D. D.
AU - Fujimori, A.
AU - Slupinski, T.
AU - Oiwa, A.
AU - Munekata, H.
PY - 2002/4/15
Y1 - 2002/4/15
N2 - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.
AB - We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.
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M3 - Article
VL - 65
SP - 1612031
EP - 1612034
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 16
M1 - 161203
ER -