Electronic structure of In1-xMnxAs studied by photoemission spectroscopy: Comparison with Ga1-xMnxAs

J. Okabayashi, T. Mizokawa, D. D. Sarma, A. Fujimori, T. Slupinski, A. Oiwa, H. Munekata

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54 Citations (Scopus)


We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1-xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1-xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1-xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1-xMnxAs and Ga1-xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As 4p hybridization in In1-xMnxAs than in Ga1-xMnxAs.

Original languageEnglish
Article number161203
Pages (from-to)1612031-1612034
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
Publication statusPublished - 2002 Apr 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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