Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy

H. Eisaki, S. Uchida, Takashi Mizokawa, H. Namatame, A. Fujimori, J. Van Elp, P. Kuiper, G. A. Sawatzky, S. Hosoya, H. Katayama-Yoshida

Research output: Contribution to journalArticle

71 Citations (Scopus)

Abstract

The electronic structure of La2-xSrxNiO4 is studied by use of photoemission spectroscopy, bremsstrahlung-isochromat spectroscopy (BIS), and electron-energy-loss spectroscopy. Quantitative analyses are made on the valence-band and Ni 2p core-level photoemission spectra through configuration-interaction calculations on a NiO6 cluster model. On the basis of these analyses, it is concluded that La2NiO4 is a charge-transfer (CT) insulator and the magnitude of the band gap is about 4 eV, nearly the same as that of NiO. The BIS spectra show that unoccupied states induced by hole doping are spread over the CT gap, which is incompatible with a rigid-band picture for the hole doping. We discuss the origin of the different insulator-to-metal transition behavior between this system and La2-xSrxCuO4.

Original languageEnglish
Pages (from-to)12513-12521
Number of pages9
JournalPhysical Review B
Volume45
Issue number21
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

Photoemission
Photoelectron spectroscopy
Electronic structure
Charge transfer
photoelectric emission
Doping (additives)
Spectroscopy
electronic structure
Core levels
Electron energy loss spectroscopy
Valence bands
bremsstrahlung
spectroscopy
Transition metals
Energy gap
charge transfer
insulators
configuration interaction
energy dissipation
transition metals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Eisaki, H., Uchida, S., Mizokawa, T., Namatame, H., Fujimori, A., Van Elp, J., ... Katayama-Yoshida, H. (1992). Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy. Physical Review B, 45(21), 12513-12521. https://doi.org/10.1103/PhysRevB.45.12513

Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy. / Eisaki, H.; Uchida, S.; Mizokawa, Takashi; Namatame, H.; Fujimori, A.; Van Elp, J.; Kuiper, P.; Sawatzky, G. A.; Hosoya, S.; Katayama-Yoshida, H.

In: Physical Review B, Vol. 45, No. 21, 1992, p. 12513-12521.

Research output: Contribution to journalArticle

Eisaki, H, Uchida, S, Mizokawa, T, Namatame, H, Fujimori, A, Van Elp, J, Kuiper, P, Sawatzky, GA, Hosoya, S & Katayama-Yoshida, H 1992, 'Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy', Physical Review B, vol. 45, no. 21, pp. 12513-12521. https://doi.org/10.1103/PhysRevB.45.12513
Eisaki, H. ; Uchida, S. ; Mizokawa, Takashi ; Namatame, H. ; Fujimori, A. ; Van Elp, J. ; Kuiper, P. ; Sawatzky, G. A. ; Hosoya, S. ; Katayama-Yoshida, H. / Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy. In: Physical Review B. 1992 ; Vol. 45, No. 21. pp. 12513-12521.
@article{ba92087267fd403cbc9dac4e9bbfcbfb,
title = "Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy",
abstract = "The electronic structure of La2-xSrxNiO4 is studied by use of photoemission spectroscopy, bremsstrahlung-isochromat spectroscopy (BIS), and electron-energy-loss spectroscopy. Quantitative analyses are made on the valence-band and Ni 2p core-level photoemission spectra through configuration-interaction calculations on a NiO6 cluster model. On the basis of these analyses, it is concluded that La2NiO4 is a charge-transfer (CT) insulator and the magnitude of the band gap is about 4 eV, nearly the same as that of NiO. The BIS spectra show that unoccupied states induced by hole doping are spread over the CT gap, which is incompatible with a rigid-band picture for the hole doping. We discuss the origin of the different insulator-to-metal transition behavior between this system and La2-xSrxCuO4.",
author = "H. Eisaki and S. Uchida and Takashi Mizokawa and H. Namatame and A. Fujimori and {Van Elp}, J. and P. Kuiper and Sawatzky, {G. A.} and S. Hosoya and H. Katayama-Yoshida",
year = "1992",
doi = "10.1103/PhysRevB.45.12513",
language = "English",
volume = "45",
pages = "12513--12521",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy

AU - Eisaki, H.

AU - Uchida, S.

AU - Mizokawa, Takashi

AU - Namatame, H.

AU - Fujimori, A.

AU - Van Elp, J.

AU - Kuiper, P.

AU - Sawatzky, G. A.

AU - Hosoya, S.

AU - Katayama-Yoshida, H.

PY - 1992

Y1 - 1992

N2 - The electronic structure of La2-xSrxNiO4 is studied by use of photoemission spectroscopy, bremsstrahlung-isochromat spectroscopy (BIS), and electron-energy-loss spectroscopy. Quantitative analyses are made on the valence-band and Ni 2p core-level photoemission spectra through configuration-interaction calculations on a NiO6 cluster model. On the basis of these analyses, it is concluded that La2NiO4 is a charge-transfer (CT) insulator and the magnitude of the band gap is about 4 eV, nearly the same as that of NiO. The BIS spectra show that unoccupied states induced by hole doping are spread over the CT gap, which is incompatible with a rigid-band picture for the hole doping. We discuss the origin of the different insulator-to-metal transition behavior between this system and La2-xSrxCuO4.

AB - The electronic structure of La2-xSrxNiO4 is studied by use of photoemission spectroscopy, bremsstrahlung-isochromat spectroscopy (BIS), and electron-energy-loss spectroscopy. Quantitative analyses are made on the valence-band and Ni 2p core-level photoemission spectra through configuration-interaction calculations on a NiO6 cluster model. On the basis of these analyses, it is concluded that La2NiO4 is a charge-transfer (CT) insulator and the magnitude of the band gap is about 4 eV, nearly the same as that of NiO. The BIS spectra show that unoccupied states induced by hole doping are spread over the CT gap, which is incompatible with a rigid-band picture for the hole doping. We discuss the origin of the different insulator-to-metal transition behavior between this system and La2-xSrxCuO4.

UR - http://www.scopus.com/inward/record.url?scp=0000385448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000385448&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.45.12513

DO - 10.1103/PhysRevB.45.12513

M3 - Article

VL - 45

SP - 12513

EP - 12521

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 21

ER -