Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy

H. Eisaki, S. Uchida, T. Mizokawa, H. Namatame, A. Fujimori, J. Van Elp, P. Kuiper, G. A. Sawatzky, S. Hosoya, H. Katayama-Yoshida

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Abstract

The electronic structure of La2-xSrxNiO4 is studied by use of photoemission spectroscopy, bremsstrahlung-isochromat spectroscopy (BIS), and electron-energy-loss spectroscopy. Quantitative analyses are made on the valence-band and Ni 2p core-level photoemission spectra through configuration-interaction calculations on a NiO6 cluster model. On the basis of these analyses, it is concluded that La2NiO4 is a charge-transfer (CT) insulator and the magnitude of the band gap is about 4 eV, nearly the same as that of NiO. The BIS spectra show that unoccupied states induced by hole doping are spread over the CT gap, which is incompatible with a rigid-band picture for the hole doping. We discuss the origin of the different insulator-to-metal transition behavior between this system and La2-xSrxCuO4.

Original languageEnglish
Pages (from-to)12513-12521
Number of pages9
JournalPhysical Review B
Volume45
Issue number21
DOIs
Publication statusPublished - 1992 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Eisaki, H., Uchida, S., Mizokawa, T., Namatame, H., Fujimori, A., Van Elp, J., Kuiper, P., Sawatzky, G. A., Hosoya, S., & Katayama-Yoshida, H. (1992). Electronic structure of La2-xSrxNiO4 studied by photoemission and inverse-photoemission spectroscopy. Physical Review B, 45(21), 12513-12521. https://doi.org/10.1103/PhysRevB.45.12513