Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy

E. Paris, T. Sugimoto, T. Wakita, A. Barinov, K. Terashima, V. Kandyba, O. Proux, J. Kajitani, R. Higashinaka, T. D. Matsuda, Y. Aoki, T. Yokoya, Takashi Mizokawa, N. L. Saini

    Research output: Contribution to journalArticle

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    Abstract

    We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

    Original languageEnglish
    Article number035152
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume95
    Issue number3
    DOIs
    Publication statusPublished - 2017 Jan 30

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    Photoelectron spectroscopy
    Photoelectrons
    Absorption spectroscopy
    x ray absorption
    x ray spectroscopy
    Electronic structure
    absorption spectroscopy
    photoelectrons
    photoelectric emission
    electronic structure
    valence
    X rays
    Fermi surface
    Rare earth elements
    Phase separation
    microbalances
    Band structure
    spectroscopy
    Fermi surfaces
    Phase diagrams

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy. / Paris, E.; Sugimoto, T.; Wakita, T.; Barinov, A.; Terashima, K.; Kandyba, V.; Proux, O.; Kajitani, J.; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Yokoya, T.; Mizokawa, Takashi; Saini, N. L.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 95, No. 3, 035152, 30.01.2017.

    Research output: Contribution to journalArticle

    Paris, E, Sugimoto, T, Wakita, T, Barinov, A, Terashima, K, Kandyba, V, Proux, O, Kajitani, J, Higashinaka, R, Matsuda, TD, Aoki, Y, Yokoya, T, Mizokawa, T & Saini, NL 2017, 'Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy', Physical Review B - Condensed Matter and Materials Physics, vol. 95, no. 3, 035152. https://doi.org/10.1103/PhysRevB.95.035152
    Paris, E. ; Sugimoto, T. ; Wakita, T. ; Barinov, A. ; Terashima, K. ; Kandyba, V. ; Proux, O. ; Kajitani, J. ; Higashinaka, R. ; Matsuda, T. D. ; Aoki, Y. ; Yokoya, T. ; Mizokawa, Takashi ; Saini, N. L. / Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy. In: Physical Review B - Condensed Matter and Materials Physics. 2017 ; Vol. 95, No. 3.
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    abstract = "We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.",
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    AU - Paris, E.

    AU - Sugimoto, T.

    AU - Wakita, T.

    AU - Barinov, A.

    AU - Terashima, K.

    AU - Kandyba, V.

    AU - Proux, O.

    AU - Kajitani, J.

    AU - Higashinaka, R.

    AU - Matsuda, T. D.

    AU - Aoki, Y.

    AU - Yokoya, T.

    AU - Mizokawa, Takashi

    AU - Saini, N. L.

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    N2 - We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

    AB - We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

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