Electronic structure of the oxide-diluted magnetic semiconductor Zn1-χMnχO

T. Mizokawa, T. Nambu, A. Fujimori, T. Fukumura, M. Kawasaki

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Abstract

We have studied the electronic structure of Zn1-χMnχO using photoemission spectroscopy measurements and configuration-interaction (CI) calculations on a MnO4 cluster model. It is shown that the CI calculation can give a consistent description of the photoemission and d-d optical absorption spectra of Zn1-χMnχO as well as those of other II-VI- and III-V-based diluted magnetic semiconductors such as Cd1-χMnχTe and Ga1-χMnχAs. The CI approach predicts that the magnitude of the p-d exchange constant in Zn1-χMnχO is much larger than that in Ga1-χMnχAs.

Original languageEnglish
Article number085209
Pages (from-to)852091-852095
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number8
Publication statusPublished - 2002 Feb 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Mizokawa, T., Nambu, T., Fujimori, A., Fukumura, T., & Kawasaki, M. (2002). Electronic structure of the oxide-diluted magnetic semiconductor Zn1-χMnχO. Physical Review B - Condensed Matter and Materials Physics, 65(8), 852091-852095. [085209].