Electronic structure of the oxide-diluted magnetic semiconductor (formula presented)

T. Mizokawa, T. Nambu, A. Fujimori, T. Fukumura, M. Kawasaki

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Abstract

We have studied the electronic structure of (formula presented) using photoemission spectroscopy measurements and configuration-interaction (CI) calculations on a (formula presented) cluster model. It is shown that the CI calculation can give a consistent description of the photoemission and (formula presented) optical absorption spectra of (formula presented) as well as those of other II-VI- and III-V-based diluted magnetic semiconductors such as (formula presented) and (formula presented) The CI approach predicts that the magnitude of the (formula presented) exchange constant in (formula presented) is much larger than that in (formula presented).

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number8
DOIs
Publication statusPublished - 2002 Jan 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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