Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Jin Nakamura; Eiki Kabasawa; Yoshihisa Harada; Shingo Iriyama; Akihiro Kawano; Tamio Oguchi; Kazuhiko Kuroki; Yoshihiko Takano; Hiroshi Kawarada

doi:10.1016/j.physc.2010.05.240

Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Jin Nakamura, Eiki Kabasawa, Yoshihisa Harada, Shingo Iriyama, Akihiro Kawano, Tamio Oguchi, Kazuhiko Kuroki, Yoshihiko Takano, Hiroshi Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B₂ dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or B_n cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

Original language	English
Pages (from-to)	S671-S672
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2010.05.240
Publication status	Published - 2010 Dec 1

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Keywords

Boron-doped diamond
Carrier compensation
Electronic structure
Soft X-rays absorption spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Cite this

Nakamura, J., Kabasawa, E., Harada, Y., Iriyama, S., Kawano, A., Oguchi, T., Kuroki, K., Takano, Y., & Kawarada, H. (2010). Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. Physica C: Superconductivity and its applications, 470(SUPPL.1), S671-S672. https://doi.org/10.1016/j.physc.2010.05.240

Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. / Nakamura, Jin; Kabasawa, Eiki; Harada, Yoshihisa; Iriyama, Shingo; Kawano, Akihiro; Oguchi, Tamio; Kuroki, Kazuhiko; Takano, Yoshihiko; Kawarada, Hiroshi.

In: Physica C: Superconductivity and its applications, Vol. 470, No. SUPPL.1, 01.12.2010, p. S671-S672.

Research output: Contribution to journal › Article

Nakamura, Jin ; Kabasawa, Eiki ; Harada, Yoshihisa ; Iriyama, Shingo ; Kawano, Akihiro ; Oguchi, Tamio ; Kuroki, Kazuhiko ; Takano, Yoshihiko ; Kawarada, Hiroshi. / Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. In: Physica C: Superconductivity and its applications. 2010 ; Vol. 470, No. SUPPL.1. pp. S671-S672.

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AU - Kawano, Akihiro

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AB - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

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Access to Document

10.1016/j.physc.2010.05.240