Abstract
Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.
| Original language | English |
|---|---|
| Pages (from-to) | S671-S672 |
| Journal | Physica C: Superconductivity and its applications |
| Volume | 470 |
| Issue number | SUPPL.1 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
Keywords
- Boron-doped diamond
- Carrier compensation
- Electronic structure
- Soft X-rays absorption spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
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Cite this
Nakamura, J., Kabasawa, E., Harada, Y., Iriyama, S., Kawano, A., Oguchi, T., Kuroki, K., Takano, Y., & Kawarada, H. (2010). Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. Physica C: Superconductivity and its applications, 470(SUPPL.1), S671-S672. https://doi.org/10.1016/j.physc.2010.05.240