Abstract
Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.
| Original language | English |
|---|---|
| Journal | Physica C: Superconductivity and its Applications |
| Volume | 470 |
| Issue number | SUPPL.1 |
| DOIs | |
| Publication status | Published - 2010 Dec |
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Keywords
- Boron-doped diamond
- Carrier compensation
- Electronic structure
- Soft X-rays absorption spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Energy Engineering and Power Technology
- Electronic, Optical and Magnetic Materials
Cite this
Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. / Nakamura, Jin; Kabasawa, Eiki; Harada, Yoshihisa; Iriyama, Shingo; Kawano, Akihiro; Oguchi, Tamio; Kuroki, Kazuhiko; Takano, Yoshihiko; Kawarada, Hiroshi.
In: Physica C: Superconductivity and its Applications, Vol. 470, No. SUPPL.1, 12.2010.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy
AU - Nakamura, Jin
AU - Kabasawa, Eiki
AU - Harada, Yoshihisa
AU - Iriyama, Shingo
AU - Kawano, Akihiro
AU - Oguchi, Tamio
AU - Kuroki, Kazuhiko
AU - Takano, Yoshihiko
AU - Kawarada, Hiroshi
PY - 2010/12
Y1 - 2010/12
N2 - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.
AB - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.
KW - Boron-doped diamond
KW - Carrier compensation
KW - Electronic structure
KW - Soft X-rays absorption spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=78649705400&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78649705400&partnerID=8YFLogxK
U2 - 10.1016/j.physc.2010.05.240
DO - 10.1016/j.physc.2010.05.240
M3 - Article
AN - SCOPUS:78649705400
VL - 470
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - SUPPL.1
ER -