Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Jin Nakamura; Eiki Kabasawa; Yoshihisa Harada; Shingo Iriyama; Akihiro Kawano; Tamio Oguchi; Kazuhiko Kuroki; Yoshihiko Takano; Hiroshi Kawarada

doi:10.1016/j.physc.2010.05.240

Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Jin Nakamura^*, Eiki Kabasawa, Yoshihisa Harada, Shingo Iriyama, Akihiro Kawano, Tamio Oguchi, Kazuhiko Kuroki, Yoshihiko Takano, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B₂ dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or B_n cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

Original language	English
Pages (from-to)	S671-S672
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2010.05.240
Publication status	Published - 2010 Dec

Keywords

Boron-doped diamond
Carrier compensation
Electronic structure
Soft X-rays absorption spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/j.physc.2010.05.240

Cite this

@article{141c8b3d01f4404b8edbd8e774886e81,

title = "Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy",

abstract = "Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.",

keywords = "Boron-doped diamond, Carrier compensation, Electronic structure, Soft X-rays absorption spectroscopy",

author = "Jin Nakamura and Eiki Kabasawa and Yoshihisa Harada and Shingo Iriyama and Akihiro Kawano and Tamio Oguchi and Kazuhiko Kuroki and Yoshihiko Takano and Hiroshi Kawarada",

note = "Funding Information: This work was supported by MST and MEXT, Japan.",

year = "2010",

month = dec,

doi = "10.1016/j.physc.2010.05.240",

language = "English",

volume = "470",

pages = "S671--S672",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "SUPPL.1",

}

TY - JOUR

T1 - Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

AU - Nakamura, Jin

AU - Kabasawa, Eiki

AU - Harada, Yoshihisa

AU - Iriyama, Shingo

AU - Kawano, Akihiro

AU - Oguchi, Tamio

AU - Kuroki, Kazuhiko

AU - Takano, Yoshihiko

AU - Kawarada, Hiroshi

N1 - Funding Information: This work was supported by MST and MEXT, Japan.

PY - 2010/12

Y1 - 2010/12

N2 - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

AB - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

KW - Boron-doped diamond

KW - Carrier compensation

KW - Electronic structure

KW - Soft X-rays absorption spectroscopy

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U2 - 10.1016/j.physc.2010.05.240

DO - 10.1016/j.physc.2010.05.240

M3 - Article

AN - SCOPUS:78649705400

VL - 470

SP - S671-S672

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - SUPPL.1

ER -

Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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