Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Jin Nakamura, Eiki Kabasawa, Yoshihisa Harada, Shingo Iriyama, Akihiro Kawano, Tamio Oguchi, Kazuhiko Kuroki, Yoshihiko Takano, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

    Original languageEnglish
    JournalPhysica C: Superconductivity and its Applications
    Volume470
    Issue numberSUPPL.1
    DOIs
    Publication statusPublished - 2010 Dec

    Fingerprint

    Diamond
    X ray absorption spectroscopy
    Boron
    Epitaxial growth
    Electronic structure
    Diamonds
    absorption spectroscopy
    boron
    diamonds
    electronic structure
    x rays
    Fermi level
    Dimers
    Superconducting transition temperature
    transition temperature
    dimers
    Polarization
    Crystalline materials
    polarization
    Direction compound

    Keywords

    • Boron-doped diamond
    • Carrier compensation
    • Electronic structure
    • Soft X-rays absorption spectroscopy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Energy Engineering and Power Technology
    • Electronic, Optical and Magnetic Materials

    Cite this

    Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. / Nakamura, Jin; Kabasawa, Eiki; Harada, Yoshihisa; Iriyama, Shingo; Kawano, Akihiro; Oguchi, Tamio; Kuroki, Kazuhiko; Takano, Yoshihiko; Kawarada, Hiroshi.

    In: Physica C: Superconductivity and its Applications, Vol. 470, No. SUPPL.1, 12.2010.

    Research output: Contribution to journalArticle

    Nakamura, Jin ; Kabasawa, Eiki ; Harada, Yoshihisa ; Iriyama, Shingo ; Kawano, Akihiro ; Oguchi, Tamio ; Kuroki, Kazuhiko ; Takano, Yoshihiko ; Kawarada, Hiroshi. / Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy. In: Physica C: Superconductivity and its Applications. 2010 ; Vol. 470, No. SUPPL.1.
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    AU - Harada, Yoshihisa

    AU - Iriyama, Shingo

    AU - Kawano, Akihiro

    AU - Oguchi, Tamio

    AU - Kuroki, Kazuhiko

    AU - Takano, Yoshihiko

    AU - Kawarada, Hiroshi

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    AB - Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

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