Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Jin Nakamura, Eiki Kabasawa, Yoshihisa Harada, Shingo Iriyama, Akihiro Kawano, Tamio Oguchi, Kazuhiko Kuroki, Yoshihiko Takano, Hiroshi Kawarada

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    Abstract

    Four B-2p in-gap components are observed in B-K XAS spectra using single crystalline boron-doped diamond (BDD) sample. From the polarization dependence of the spectra, the weak peak labeled 1 near the Fermi level is assigned to the hybridized state with C-2p hole state. For the BDD sample grown along 〈1 1 1〉 direction, B2 dimer is easily created along the growth direction and compensate carriers. A considerable amount of B-H complex and/or Bn cluster is also present. A growth of the peak-1 area intensity is most important to rise the superconducting transition temperature of BDD.

    Original languageEnglish
    JournalPhysica C: Superconductivity and its Applications
    Volume470
    Issue numberSUPPL.1
    DOIs
    Publication statusPublished - 2010 Dec

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    Keywords

    • Boron-doped diamond
    • Carrier compensation
    • Electronic structure
    • Soft X-rays absorption spectroscopy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Energy Engineering and Power Technology
    • Electronic, Optical and Magnetic Materials

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