Abstract
Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 39-46 |
| Number of pages | 8 |
| Volume | 956 |
| Publication status | Published - 2007 |
| Event | 2006 MRS Fall Meeting - Boston, MA Duration: 2006 Nov 27 → 2006 Dec 1 |
Other
| Other | 2006 MRS Fall Meeting |
|---|---|
| City | Boston, MA |
| Period | 06/11/27 → 06/12/1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Electronic structures of heavily boron-doped superconducting diamond films. / Yokoya, Takayoshi; Okazaki, Hiroyuki; Nakamura, Tetsuya; Matsushita, Tomohiro; Muro, Takayuki; Ikenaga, Eiji; Kobata, Masaaki; Kobayashi, Keisuke; Takeuchi, Akihisa; Awaji, Akihiro; Takano, Yoshihiko; Nagao, Masanori; Takenouchi, Tomohiro; Kawarada, Hiroshi; Oguchi, Tamio.
Materials Research Society Symposium Proceedings. Vol. 956 2007. p. 39-46.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Electronic structures of heavily boron-doped superconducting diamond films
AU - Yokoya, Takayoshi
AU - Okazaki, Hiroyuki
AU - Nakamura, Tetsuya
AU - Matsushita, Tomohiro
AU - Muro, Takayuki
AU - Ikenaga, Eiji
AU - Kobata, Masaaki
AU - Kobayashi, Keisuke
AU - Takeuchi, Akihisa
AU - Awaji, Akihiro
AU - Takano, Yoshihiko
AU - Nagao, Masanori
AU - Takenouchi, Tomohiro
AU - Kawarada, Hiroshi
AU - Oguchi, Tamio
PY - 2007
Y1 - 2007
N2 - Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.
AB - Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.
UR - http://www.scopus.com/inward/record.url?scp=40949146181&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=40949146181&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:40949146181
SN - 9781558999138
VL - 956
SP - 39
EP - 46
BT - Materials Research Society Symposium Proceedings
ER -