Electronic transport in Ta2 O5 resistive switch

Toshitsugu Sakamoto, Kevin Lister, Naoki Banno, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

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Abstract

The authors examined the electronic transport of a solid electrolyte resistive switch. Using element analysis and the temperature dependence of its electronic transport, they deduced that the conductive path is composed of Cu metal precipitated in the solid electrolyte film by an electrochemical reaction. Furthermore, they observed Coulomb blockade phenomena at 4 K when the switch was in the off state. Their observations and experimental results suggest that the metallic conductive path consists of metallic islands separated by tunneling barriers and that switching between the on and off states originates from modulation in the tunneling barriers.

Original languageEnglish
Article number092110
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007 Sep 7

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sakamoto, T., Lister, K., Banno, N., Hasegawa, T., Terabe, K., & Aono, M. (2007). Electronic transport in Ta2 O5 resistive switch. Applied Physics Letters, 91(9), [092110]. https://doi.org/10.1063/1.2777170