Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

Yuki Ozaki, Shunya Ito, Nobuya Hiroshiba, Takahiro Nakamura, Masaru Nakagawa

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7 Citations (Scopus)


By scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM-EDS), we investigated the elemental depth profiles of organic electron beam resist films after the sequential infiltration synthesis (SIS) of inorganic alumina. Although a 40-nm-thick poly(methyl methacrylate) (PMMA) film was entirely hybridized with alumina, an uneven distribution was observed near the interface between the substrate and the resist as well as near the resist surface. The uneven distribution was observed around the center of a 100-nm-thick PMMA film. The thicknesses of the PMMA and CSAR62 resist films decreased almost linearly as functions of plasma etching period. The comparison of etching rate among oxygen reactive ion etching, C3F8 reactive ion beam etching (RIBE), and Ar ion beam milling suggested that the SIS treatment enhanced the etching resistance of the electron beam resists to chemical reactions rather than to ion collisions. We proposed oxygen- and Arassisted C3F8 RIBE for the fabrication of silica imprint molds by electron beam lithography.

Original languageEnglish
Article number06HG01
JournalJapanese Journal of Applied Physics
Issue number6
Publication statusPublished - 2018 Jun 1
Externally publishedYes


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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