Energetics in the growth mechanism of semiconductor heteroepitaxy

N. Miyagishima, K. Okajima, N. Oyama, K. Shiraishi, K. Takeda, T. Ohno, T. Ito

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1 Citation (Scopus)

Abstract

We phenomenologically investigate the growth behavior in lattice-mismatched heteroepitaxy. We focus on the critical thickness of misfit dislocations (MDs) in Volmer-Weber (VW) and Stranski-Krastanov (SK) modes. Calculated results show that critical thickness in VW mode is much smaller than that in SK mode. This is because energy loss in MD formation in VW islands is smaller than that in SK islands due to the absence of wetting layers during VW growth.

Original languageEnglish
Pages (from-to)1599-1602
Number of pages4
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4 II
DOIs
Publication statusPublished - 2002 Apr

Keywords

  • A1. Defects
  • A1. Growth models
  • A1. Stresses
  • A3. Molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Miyagishima, N., Okajima, K., Oyama, N., Shiraishi, K., Takeda, K., Ohno, T., & Ito, T. (2002). Energetics in the growth mechanism of semiconductor heteroepitaxy. Journal of Crystal Growth, 237-239(1 4 II), 1599-1602. https://doi.org/10.1016/S0022-0248(01)02351-X