Energetics in the growth mechanism of semiconductor heteroepitaxy

N. Miyagishima, K. Okajima, N. Oyama, K. Shiraishi, Kyozaburo Takeda, T. Ohno, T. Ito

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    We phenomenologically investigate the growth behavior in lattice-mismatched heteroepitaxy. We focus on the critical thickness of misfit dislocations (MDs) in Volmer-Weber (VW) and Stranski-Krastanov (SK) modes. Calculated results show that critical thickness in VW mode is much smaller than that in SK mode. This is because energy loss in MD formation in VW islands is smaller than that in SK islands due to the absence of wetting layers during VW growth.

    Original languageEnglish
    Pages (from-to)1599-1602
    Number of pages4
    JournalJournal of Crystal Growth
    Volume237-239
    Issue number1-4 II
    DOIs
    Publication statusPublished - 2002 Apr

    Fingerprint

    Dislocations (crystals)
    Epitaxial growth
    Semiconductor materials
    Crystal lattices
    Wetting
    Energy dissipation
    wetting
    energy dissipation

    Keywords

    • A1. Defects
    • A1. Growth models
    • A1. Stresses
    • A3. Molecular beam epitaxy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Miyagishima, N., Okajima, K., Oyama, N., Shiraishi, K., Takeda, K., Ohno, T., & Ito, T. (2002). Energetics in the growth mechanism of semiconductor heteroepitaxy. Journal of Crystal Growth, 237-239(1-4 II), 1599-1602. https://doi.org/10.1016/S0022-0248(01)02351-X

    Energetics in the growth mechanism of semiconductor heteroepitaxy. / Miyagishima, N.; Okajima, K.; Oyama, N.; Shiraishi, K.; Takeda, Kyozaburo; Ohno, T.; Ito, T.

    In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 II, 04.2002, p. 1599-1602.

    Research output: Contribution to journalArticle

    Miyagishima, N, Okajima, K, Oyama, N, Shiraishi, K, Takeda, K, Ohno, T & Ito, T 2002, 'Energetics in the growth mechanism of semiconductor heteroepitaxy', Journal of Crystal Growth, vol. 237-239, no. 1-4 II, pp. 1599-1602. https://doi.org/10.1016/S0022-0248(01)02351-X
    Miyagishima N, Okajima K, Oyama N, Shiraishi K, Takeda K, Ohno T et al. Energetics in the growth mechanism of semiconductor heteroepitaxy. Journal of Crystal Growth. 2002 Apr;237-239(1-4 II):1599-1602. https://doi.org/10.1016/S0022-0248(01)02351-X
    Miyagishima, N. ; Okajima, K. ; Oyama, N. ; Shiraishi, K. ; Takeda, Kyozaburo ; Ohno, T. ; Ito, T. / Energetics in the growth mechanism of semiconductor heteroepitaxy. In: Journal of Crystal Growth. 2002 ; Vol. 237-239, No. 1-4 II. pp. 1599-1602.
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