Energy band profile of hafnium silicates estimated by X-ray photoelectron spectroscopy

Toshihide Ito, Hiromitsu Kato, Tomohiro Nango, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Amorphous hafnium silicate films with several composition ratios were deposited on Si substrates by plasma-enhanced chemical vapor deposition, and their energy band profiles were studied by X-ray photoelectron spectroscopy. The band gap energy estimated from the energy loss spectrum of O 1s electrons decreases monotonically and then approaches a constant value with an increase in hafnium content. The valence band offset and the conduction band offset were estimated using the sample sandwiched between an evaporated Au electrode and the Si substrate. Although the two offsets decrease until they become almost constant with an increase in hafnium content at both silicate/Si and silicate/ Au interfaces, they hold values higher than that necessary for a high-k dielectric material to maintain a good insulating performance for all the deposited silicates.

    Original languageEnglish
    Pages (from-to)8199-8202
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume43
    Issue number12
    DOIs
    Publication statusPublished - 2004 Dec

    Fingerprint

    Hafnium
    hafnium
    Band structure
    Silicates
    energy bands
    silicates
    X ray photoelectron spectroscopy
    photoelectron spectroscopy
    profiles
    x rays
    Substrates
    Plasma enhanced chemical vapor deposition
    Valence bands
    Conduction bands
    Energy dissipation
    conduction bands
    Energy gap
    energy dissipation
    vapor deposition
    valence

    Keywords

    • Band gap energy
    • Band offset
    • Energy band profile
    • Gate Insulating material
    • Hafnium silicate
    • High-k dielectric material
    • Plasma-enhanced chemical vapor deposition
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Energy band profile of hafnium silicates estimated by X-ray photoelectron spectroscopy. / Ito, Toshihide; Kato, Hiromitsu; Nango, Tomohiro; Ohki, Yoshimichi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 12, 12.2004, p. 8199-8202.

    Research output: Contribution to journalArticle

    @article{038673b8909d4e4882dbfd9f100bf653,
    title = "Energy band profile of hafnium silicates estimated by X-ray photoelectron spectroscopy",
    abstract = "Amorphous hafnium silicate films with several composition ratios were deposited on Si substrates by plasma-enhanced chemical vapor deposition, and their energy band profiles were studied by X-ray photoelectron spectroscopy. The band gap energy estimated from the energy loss spectrum of O 1s electrons decreases monotonically and then approaches a constant value with an increase in hafnium content. The valence band offset and the conduction band offset were estimated using the sample sandwiched between an evaporated Au electrode and the Si substrate. Although the two offsets decrease until they become almost constant with an increase in hafnium content at both silicate/Si and silicate/ Au interfaces, they hold values higher than that necessary for a high-k dielectric material to maintain a good insulating performance for all the deposited silicates.",
    keywords = "Band gap energy, Band offset, Energy band profile, Gate Insulating material, Hafnium silicate, High-k dielectric material, Plasma-enhanced chemical vapor deposition, X-ray photoelectron spectroscopy",
    author = "Toshihide Ito and Hiromitsu Kato and Tomohiro Nango and Yoshimichi Ohki",
    year = "2004",
    month = "12",
    doi = "10.1143/JJAP.43.8199",
    language = "English",
    volume = "43",
    pages = "8199--8202",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "12",

    }

    TY - JOUR

    T1 - Energy band profile of hafnium silicates estimated by X-ray photoelectron spectroscopy

    AU - Ito, Toshihide

    AU - Kato, Hiromitsu

    AU - Nango, Tomohiro

    AU - Ohki, Yoshimichi

    PY - 2004/12

    Y1 - 2004/12

    N2 - Amorphous hafnium silicate films with several composition ratios were deposited on Si substrates by plasma-enhanced chemical vapor deposition, and their energy band profiles were studied by X-ray photoelectron spectroscopy. The band gap energy estimated from the energy loss spectrum of O 1s electrons decreases monotonically and then approaches a constant value with an increase in hafnium content. The valence band offset and the conduction band offset were estimated using the sample sandwiched between an evaporated Au electrode and the Si substrate. Although the two offsets decrease until they become almost constant with an increase in hafnium content at both silicate/Si and silicate/ Au interfaces, they hold values higher than that necessary for a high-k dielectric material to maintain a good insulating performance for all the deposited silicates.

    AB - Amorphous hafnium silicate films with several composition ratios were deposited on Si substrates by plasma-enhanced chemical vapor deposition, and their energy band profiles were studied by X-ray photoelectron spectroscopy. The band gap energy estimated from the energy loss spectrum of O 1s electrons decreases monotonically and then approaches a constant value with an increase in hafnium content. The valence band offset and the conduction band offset were estimated using the sample sandwiched between an evaporated Au electrode and the Si substrate. Although the two offsets decrease until they become almost constant with an increase in hafnium content at both silicate/Si and silicate/ Au interfaces, they hold values higher than that necessary for a high-k dielectric material to maintain a good insulating performance for all the deposited silicates.

    KW - Band gap energy

    KW - Band offset

    KW - Energy band profile

    KW - Gate Insulating material

    KW - Hafnium silicate

    KW - High-k dielectric material

    KW - Plasma-enhanced chemical vapor deposition

    KW - X-ray photoelectron spectroscopy

    UR - http://www.scopus.com/inward/record.url?scp=13644275687&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=13644275687&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.43.8199

    DO - 10.1143/JJAP.43.8199

    M3 - Article

    VL - 43

    SP - 8199

    EP - 8202

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 12

    ER -