Energy Loss and Straggling of High-Energy Electrons in Silicon Detectors

Katsuaki Nagata, Tadayoshi Doke, Jun Kikuchi, Nobuyuki Hasebe, Atsushi Nakamoto

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    The experiment done by Aitken et al. [Phys. Rev. 179 (1969) 393] showed that the most probable energy loss in silicon detectors by relativistic electrons deviated from the theoretical value by about 4.5% and the spectrum width was broader then the Landau width. They considered that such disagreements could be understood by taking into account the absorption of radiation produced by the electron passing through the detector. More accurate measurements are made on the energy losses in silicon detectors of thickness 1.565mm and 2.905mm for electrons with energies from 50 MeV to 1 GeV. Contrary to the results observed by Aitken et al., the values of the most probable energy loss obtained in this experiment agree within about 2% with theoretical ones, but the spectra are 10-20% broader than the Landau width. These results show no apparent evidence for the increase in electron ionization loss by the radiation absorption as previously suggested by Aitken et al.

    Original languageEnglish
    Pages (from-to)697-701
    Number of pages5
    JournalJapanese Journal of Applied Physics
    Volume14
    Issue number5
    DOIs
    Publication statusPublished - 1975

    Fingerprint

    Silicon detectors
    high energy electrons
    Energy dissipation
    energy dissipation
    Electrons
    detectors
    silicon
    radiation absorption
    electrons
    Radiation
    Ionization
    ionization
    Experiments
    radiation
    Detectors
    energy

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Energy Loss and Straggling of High-Energy Electrons in Silicon Detectors. / Nagata, Katsuaki; Doke, Tadayoshi; Kikuchi, Jun; Hasebe, Nobuyuki; Nakamoto, Atsushi.

    In: Japanese Journal of Applied Physics, Vol. 14, No. 5, 1975, p. 697-701.

    Research output: Contribution to journalArticle

    Nagata, K, Doke, T, Kikuchi, J, Hasebe, N & Nakamoto, A 1975, 'Energy Loss and Straggling of High-Energy Electrons in Silicon Detectors', Japanese Journal of Applied Physics, vol. 14, no. 5, pp. 697-701. https://doi.org/10.1143/JJAP.14.697
    Nagata, Katsuaki ; Doke, Tadayoshi ; Kikuchi, Jun ; Hasebe, Nobuyuki ; Nakamoto, Atsushi. / Energy Loss and Straggling of High-Energy Electrons in Silicon Detectors. In: Japanese Journal of Applied Physics. 1975 ; Vol. 14, No. 5. pp. 697-701.
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