Energy relaxation time of hot carriers photoexcited in InGaN

T. Ushiyama, T. Toizumi, Y. Nakazato, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time-resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot-carrier relaxation time is 0.92 ps at 15 K. The hot-carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron-phonon scattering dominates the carrier relaxation process.

    Original languageEnglish
    Pages (from-to)143-145
    Number of pages3
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Issue number1
    DOIs
    Publication statusPublished - 2008

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    relaxation time
    energy
    pumps
    temperature dependence
    probes
    scattering
    electrons

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Energy relaxation time of hot carriers photoexcited in InGaN. / Ushiyama, T.; Toizumi, T.; Nakazato, Y.; Tackeuchi, Atsushi.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 2008, p. 143-145.

    Research output: Contribution to journalArticle

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    AU - Toizumi, T.

    AU - Nakazato, Y.

    AU - Tackeuchi, Atsushi

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