Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

doi:10.1143/jjap.39.2428

Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field

Kazuhide Kumakura^*, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3 × 10¹⁸ cm^-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.

Original language	English
Pages (from-to)	2428-2430
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2428
Publication status	Published - 2000
Externally published	Yes

Keywords

AlGaN alloys
AlGaN/GaN superlattices
Energy shift
MOVPE
Mg doping
Piezoelectric effect
p-type

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field",

abstract = "We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 {\AA} and 100 {\AA} to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.",

keywords = "AlGaN alloys, AlGaN/GaN superlattices, Energy shift, MOVPE, Mg doping, Piezoelectric effect, p-type",

author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",

year = "2000",

doi = "10.1143/jjap.39.2428",

language = "English",

volume = "39",

pages = "2428--2430",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

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T1 - Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2000

Y1 - 2000

N2 - We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.

AB - We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.

KW - AlGaN alloys

KW - AlGaN/GaN superlattices

KW - Energy shift

KW - MOVPE

KW - Mg doping

KW - Piezoelectric effect

KW - p-type

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DO - 10.1143/jjap.39.2428

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 B

ER -

Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field

Abstract

Keywords

ASJC Scopus subject areas

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