Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.

Original languageEnglish
Pages (from-to)2428-2430
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Hole concentration
Superlattices
superlattices
Valence bands
Electric properties
Temperature
electrical properties
valence
electrical resistivity
shift
room temperature
temperature
energy

Keywords

  • AlGaN alloys
  • AlGaN/GaN superlattices
  • Energy shift
  • Mg doping
  • MOVPE
  • p-type
  • Piezoelectric effect

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field. / Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2428-2430.

Research output: Contribution to journalArticle

@article{235537eb78be400d8c6ee48b19064880,
title = "Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field",
abstract = "We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 {\AA} and 100 {\AA} to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.",
keywords = "AlGaN alloys, AlGaN/GaN superlattices, Energy shift, Mg doping, MOVPE, p-type, Piezoelectric effect",
author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",
year = "2000",
language = "English",
volume = "39",
pages = "2428--2430",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2000

Y1 - 2000

N2 - We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.

AB - We investigated the electrical properties of uniformly Mg-doped AlGaN/GaN superlattices (SLs) with various Al mole fractions and SL period thicknesses. We found that their sheet hole concentration depended strongly on the Al mole fraction and SL period thickness. We found the maximum spatial averaged hole concentrations for SLs with period thicknesses of 360 Å and 100 Å to be 3 × 1018 cm-3 at room temperature. The resistivities of the SLs were less temperature dependent than those of GaN and AlGaN, indicating that the enhanced hole generation in these SLs could be ascribed to the large energy shift of the valence band edge due to the piezoelectric field.

KW - AlGaN alloys

KW - AlGaN/GaN superlattices

KW - Energy shift

KW - Mg doping

KW - MOVPE

KW - p-type

KW - Piezoelectric effect

UR - http://www.scopus.com/inward/record.url?scp=0033690224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033690224&partnerID=8YFLogxK

M3 - Article

VL - 39

SP - 2428

EP - 2430

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -