Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Shuichiro Hashimoto, Ryo Yokogawa, Shunsuke Oba, Shuhei Asada, Taiyu Xu, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices.

Original languageEnglish
Article number144305
JournalJournal of Applied Physics
Volume122
Issue number14
DOIs
Publication statusPublished - 2017 Oct 14

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nanowires
nickel
disorders
silicon
oxidation
annealing
reaction kinetics
ultraviolet spectroscopy
lithography
Raman spectroscopy
electron beams
molecular dynamics
silicon dioxide
oxides
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder. / Hashimoto, Shuichiro; Yokogawa, Ryo; Oba, Shunsuke; Asada, Shuhei; Xu, Taiyu; Tomita, Motohiro; Ogura, Atsushi; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu.

In: Journal of Applied Physics, Vol. 122, No. 14, 144305, 14.10.2017.

Research output: Contribution to journalArticle

Hashimoto, S, Yokogawa, R, Oba, S, Asada, S, Xu, T, Tomita, M, Ogura, A, Matsukawa, T, Masahara, M & Watanabe, T 2017, 'Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder', Journal of Applied Physics, vol. 122, no. 14, 144305. https://doi.org/10.1063/1.4999195
Hashimoto, Shuichiro ; Yokogawa, Ryo ; Oba, Shunsuke ; Asada, Shuhei ; Xu, Taiyu ; Tomita, Motohiro ; Ogura, Atsushi ; Matsukawa, Takashi ; Masahara, Meishoku ; Watanabe, Takanobu. / Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder. In: Journal of Applied Physics. 2017 ; Vol. 122, No. 14.
@article{ccc2107fbba84cebb6cc90b64706b3d9,
title = "Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder",
abstract = "We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices.",
author = "Shuichiro Hashimoto and Ryo Yokogawa and Shunsuke Oba and Shuhei Asada and Taiyu Xu and Motohiro Tomita and Atsushi Ogura and Takashi Matsukawa and Meishoku Masahara and Takanobu Watanabe",
year = "2017",
month = "10",
day = "14",
doi = "10.1063/1.4999195",
language = "English",
volume = "122",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

AU - Hashimoto, Shuichiro

AU - Yokogawa, Ryo

AU - Oba, Shunsuke

AU - Asada, Shuhei

AU - Xu, Taiyu

AU - Tomita, Motohiro

AU - Ogura, Atsushi

AU - Matsukawa, Takashi

AU - Masahara, Meishoku

AU - Watanabe, Takanobu

PY - 2017/10/14

Y1 - 2017/10/14

N2 - We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices.

AB - We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices.

UR - http://www.scopus.com/inward/record.url?scp=85031662236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031662236&partnerID=8YFLogxK

U2 - 10.1063/1.4999195

DO - 10.1063/1.4999195

M3 - Article

AN - SCOPUS:85031662236

VL - 122

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 14

M1 - 144305

ER -