Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Shuichiro Hashimoto, Ryo Yokogawa, Shunsuke Oba, Shuhei Asada, Taiyu Xu, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

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Abstract

We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices.

Original languageEnglish
Article number144305
JournalJournal of Applied Physics
Volume122
Issue number14
DOIs
Publication statusPublished - 2017 Oct 14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hashimoto, S., Yokogawa, R., Oba, S., Asada, S., Xu, T., Tomita, M., Ogura, A., Matsukawa, T., Masahara, M., & Watanabe, T. (2017). Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder. Journal of Applied Physics, 122(14), [144305]. https://doi.org/10.1063/1.4999195