Enhanced oxidation of silicon using a collimated hyperthermal ozone beam

T. Nishiguchi, Y. Morikawa, M. Miyamoto, H. Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Oxidation of silicon by collimated hyperthermal ozone beam produced by pulsed-laser ablation of solid ozone, was reported. This led to decrease in the process temperature and increase in the controllability of oxidation. Laser shots, to which the number of supplied ozone molecules were propotional, were used to control the oxidation rate. Higher oxidation efficieny was reported in comparison with that by using continuous ozone spray with thermal energy.

Original languageEnglish
Pages (from-to)382-384
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
Publication statusPublished - 2001 Jul 16
Externally publishedYes

Fingerprint

ozone
oxidation
silicon
controllability
thermal energy
laser ablation
shot
sprayers
pulsed lasers
lasers
molecules
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced oxidation of silicon using a collimated hyperthermal ozone beam. / Nishiguchi, T.; Morikawa, Y.; Miyamoto, M.; Nonaka, H.; Ichimura, Shingo.

In: Applied Physics Letters, Vol. 79, No. 3, 16.07.2001, p. 382-384.

Research output: Contribution to journalArticle

Nishiguchi, T. ; Morikawa, Y. ; Miyamoto, M. ; Nonaka, H. ; Ichimura, Shingo. / Enhanced oxidation of silicon using a collimated hyperthermal ozone beam. In: Applied Physics Letters. 2001 ; Vol. 79, No. 3. pp. 382-384.
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