Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film

Yuka Tsuboi; Feijiu Wang; Daichi Kozawa; Kazuma Funahashi; Shinichiro Mouri; Yuhei Miyauchi; Taishi Takenobu; Kazunari Matsuda

doi:10.1039/c5nr03046c

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film

Yuka Tsuboi, Feijiu Wang, Daichi Kozawa, Kazuma Funahashi, Shinichiro Mouri, Yuhei Miyauchi, Taishi Takenobu, Kazunari Matsuda^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

105 Citations (Scopus)

Abstract

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS<inf>2</inf> thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS<inf>2</inf> layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS<inf>2</inf>/n-Si solar cell.

Original language	English
Pages (from-to)	14476-14482
Number of pages	7
Journal	Nanoscale
Volume	7
Issue number	34
DOIs	https://doi.org/10.1039/c5nr03046c
Publication status	Published - 2015 Sept 14

ASJC Scopus subject areas

Materials Science(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1039/c5nr03046c

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abstract = "Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.",

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AU - Tsuboi, Yuka

AU - Wang, Feijiu

AU - Kozawa, Daichi

AU - Funahashi, Kazuma

AU - Mouri, Shinichiro

AU - Miyauchi, Yuhei

AU - Takenobu, Taishi

AU - Matsuda, Kazunari

PY - 2015/9/14

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AB - Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

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Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film

Abstract

ASJC Scopus subject areas

UN SDGs

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