Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film

Yuka Tsuboi, Feijiu Wang, Daichi Kozawa, Kazuma Funahashi, Shinichiro Mouri, Yuhei Miyauchi, Taishi Takenobu, Kazunari Matsuda

    Research output: Contribution to journalArticle

    78 Citations (Scopus)

    Abstract

    Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS<inf>2</inf> thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS<inf>2</inf> layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS<inf>2</inf>/n-Si solar cell.

    Original languageEnglish
    Pages (from-to)14476-14482
    Number of pages7
    JournalNanoscale
    Volume7
    Issue number34
    DOIs
    Publication statusPublished - 2015 Sep 14

    ASJC Scopus subject areas

    • Materials Science(all)

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  • Cite this

    Tsuboi, Y., Wang, F., Kozawa, D., Funahashi, K., Mouri, S., Miyauchi, Y., Takenobu, T., & Matsuda, K. (2015). Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS<inf>2</inf> thin film. Nanoscale, 7(34), 14476-14482. https://doi.org/10.1039/c5nr03046c