Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani; Masashi Suzuki

doi:10.1063/1.4866969

Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani, Masashi Suzuki

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient k_t for the Yb_xGa_1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb_0.30Ga _0.70N film near the phase boundary exhibited a maximum k_t of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

Original language	English
Article number	082911
Journal	Applied Physics Letters
Volume	104
Issue number	8
DOIs	https://doi.org/10.1063/1.4866969
Publication status	Published - 2014 Feb 24
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AB - Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

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Enhanced piezoelectricity in YbGaN films near phase boundary

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