Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani, Masashi Suzuki

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

Original languageEnglish
Article number082911
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2014 Feb 24
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Enhanced piezoelectricity in YbGaN films near phase boundary'. Together they form a unique fingerprint.

Cite this