Enhanced piezoelectricity in YbGaN films near phase boundary

Takahiko Yanagitani, Masashi Suzuki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

Original languageEnglish
Article number82911
JournalApplied Physics Letters
Volume104
Issue number8
DOIs
Publication statusPublished - 2014
Externally publishedYes

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piezoelectricity
coupling coefficients
field effect transistors
filters
acoustics
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhanced piezoelectricity in YbGaN films near phase boundary. / Yanagitani, Takahiko; Suzuki, Masashi.

In: Applied Physics Letters, Vol. 104, No. 8, 82911, 2014.

Research output: Contribution to journalArticle

@article{8f56e809e68d454197ce63170327ca0b,
title = "Enhanced piezoelectricity in YbGaN films near phase boundary",
abstract = "Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1{\%}, which is approximately 2.5 times larger than that for a pure GaN.",
author = "Takahiko Yanagitani and Masashi Suzuki",
year = "2014",
doi = "10.1063/1.4866969",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Enhanced piezoelectricity in YbGaN films near phase boundary

AU - Yanagitani, Takahiko

AU - Suzuki, Masashi

PY - 2014

Y1 - 2014

N2 - Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

AB - Weak piezoelectricity in GaN is a problem in bulk acoustic wave filters and heterostructure field-effect transistors. In this study, enhancement of piezoelectricity in c-axis direction by substituting Yb for Ga was experimentally demonstrated. Thickness extensional mode electromechanical coupling coefficient kt for the YbxGa1-xN films increases with the Yb concentration from x = 0 to 0.3. Yb0.30Ga 0.70N film near the phase boundary exhibited a maximum kt of 3.1%, which is approximately 2.5 times larger than that for a pure GaN.

UR - http://www.scopus.com/inward/record.url?scp=84896746136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896746136&partnerID=8YFLogxK

U2 - 10.1063/1.4866969

DO - 10.1063/1.4866969

M3 - Article

AN - SCOPUS:84896746136

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 82911

ER -