Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi; Henry Everitt; Hadis Morkoç; Takamasa Kuroda; Atsushi Tackeuchi

doi:10.1109/TNANO.2003.808513

Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

Original language	English
Pages (from-to)	10-14
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	2
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2003.808513
Publication status	Published - 2003 Mar 1

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Keywords

GaN
Molecular-beam epitaxy
Quantum dots
Semiconductor nanostructures
Time-resolved photoluminescence

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Cite this

Neogi, A., Everitt, H., Morkoç, H., Kuroda, T., & Tackeuchi, A. (2003). Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy. IEEE Transactions on Nanotechnology, 2(1), 10-14. https://doi.org/10.1109/TNANO.2003.808513

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10.1109/TNANO.2003.808513