Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

    Original languageEnglish
    Pages (from-to)10-14
    Number of pages5
    JournalIEEE Transactions on Nanotechnology
    Volume2
    Issue number1
    DOIs
    Publication statusPublished - 2003 Mar

    Fingerprint

    Molecular beam epitaxy
    Semiconductor quantum dots
    Photoluminescence spectroscopy

    Keywords

    • GaN
    • Molecular-beam epitaxy
    • Quantum dots
    • Semiconductor nanostructures
    • Time-resolved photoluminescence

    ASJC Scopus subject areas

    • Engineering(all)
    • Hardware and Architecture

    Cite this

    Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy. / Neogi, Arup; Everitt, Henry; Morkoç, Hadis; Kuroda, Takamasa; Tackeuchi, Atsushi.

    In: IEEE Transactions on Nanotechnology, Vol. 2, No. 1, 03.2003, p. 10-14.

    Research output: Contribution to journalArticle

    Neogi, Arup ; Everitt, Henry ; Morkoç, Hadis ; Kuroda, Takamasa ; Tackeuchi, Atsushi. / Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy. In: IEEE Transactions on Nanotechnology. 2003 ; Vol. 2, No. 1. pp. 10-14.
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