Abstract
Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.
| Original language | English |
|---|---|
| Pages (from-to) | 10-14 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 2 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2003 Mar 1 |
Keywords
- GaN
- Molecular-beam epitaxy
- Quantum dots
- Semiconductor nanostructures
- Time-resolved photoluminescence
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering
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Neogi, A., Everitt, H., Morkoç, H., Kuroda, T., & Tackeuchi, A. (2003). Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy. IEEE Transactions on Nanotechnology, 2(1), 10-14. https://doi.org/10.1109/TNANO.2003.808513