TY - JOUR
T1 - Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy
AU - Neogi, Arup
AU - Everitt, Henry
AU - Morkoç, Hadis
AU - Kuroda, Takamasa
AU - Tackeuchi, Atsushi
N1 - Funding Information:
Manuscript received April 26, 2002; revised August 4, 2002. The work of A. Neogi was supported by the National Research Council (NRC). The work of H. Morkoç was supported by the Virginia Commonwealth University (VCU). This work was supported in part the National Science Foundation (NSF), the Office of Naval Research (ONR), the Air Force Office of Scientific Research (AFOSR), the Multidisciplinary Research Program of the University Research Initiative (MURI), Michigan, and in part by the Army Research Office (ARO).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/3
Y1 - 2003/3
N2 - Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.
AB - Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.
KW - GaN
KW - Molecular-beam epitaxy
KW - Quantum dots
KW - Semiconductor nanostructures
KW - Time-resolved photoluminescence
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U2 - 10.1109/TNANO.2003.808513
DO - 10.1109/TNANO.2003.808513
M3 - Article
AN - SCOPUS:1242328004
VL - 2
SP - 10
EP - 14
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 1
ER -