Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa, Masakazu Arai, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

Original languageEnglish
Pages (from-to)412031-412033
Number of pages3
JournalApplied Physics Express
Volume1
Issue number4
DOIs
Publication statusPublished - 2008 Apr 1
Externally publishedYes

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Quantum well lasers
quantum well lasers
Substrates
Temperature
temperature
Lasers
augmentation
lasers
Experiments

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates. / Fujisawa, Takeshi; Arai, Masakazu; Kakitsuka, Takaaki; Yamanaka, Takayuki; Kondo, Yasuhiro; Yasaka, Hiroshi.

In: Applied Physics Express, Vol. 1, No. 4, 01.04.2008, p. 412031-412033.

Research output: Contribution to journalArticle

Fujisawa, Takeshi ; Arai, Masakazu ; Kakitsuka, Takaaki ; Yamanaka, Takayuki ; Kondo, Yasuhiro ; Yasaka, Hiroshi. / Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates. In: Applied Physics Express. 2008 ; Vol. 1, No. 4. pp. 412031-412033.
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