Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

Hiroshi Kawarada, Makoto Aoki, Masahiro Ito

    Research output: Contribution to journalArticle

    124 Citations (Scopus)

    Abstract

    Enhancement mode-type metal-semiconductor field effect transistors using diamond have been fabricated. The transistor operation is based on the control of surface p-type conduction of a hydrogen terminated homoepitaxial layer. Boron doping was not used for the conduction. An aluminum contact is used for the Schottky gate and gold ohmic contacts are used for the source and drain. The obtained transconductance is 20-200 μs/mm using aluminum gates of 10-40 μm in length. The active region on the homoepitaxial layer is thin enough for the total depletion of carriers when the gate bias is zero.

    Original languageEnglish
    Pages (from-to)1563-1565
    Number of pages3
    JournalApplied Physics Letters
    Volume65
    Issue number12
    DOIs
    Publication statusPublished - 1994

    Fingerprint

    field effect transistors
    diamonds
    augmentation
    metals
    aluminum
    conduction
    transconductance
    electric contacts
    depletion
    boron
    transistors
    gold
    hydrogen

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds. / Kawarada, Hiroshi; Aoki, Makoto; Ito, Masahiro.

    In: Applied Physics Letters, Vol. 65, No. 12, 1994, p. 1563-1565.

    Research output: Contribution to journalArticle

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