Enhancement of electroluminescence from n-type porous silicon and its photoelectrochemical behavior

Research output: Contribution to journalArticle

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Abstract

In a study of the electroluminescence (EL) of porous silicon on an n-type Si wafer using an S2O8 2- electrolyte solution, the addition of C2H5OH to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current density for forming the porous n-Si was above or below the saturated photocurrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent density, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocurrent density. The electrochemical and enhanced electroluminescent properties of the two types of porous silicon were studied.

Original languageEnglish
Pages (from-to)1874-1880
Number of pages7
JournalJournal of the Electrochemical Society
Volume142
Issue number6
Publication statusPublished - 1995 Jun

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Porous silicon
Electroluminescence
porous silicon
electroluminescence
Photocurrents
photocurrents
Current density
augmentation
current density
porosity
anodizing
Anodic oxidation
Electrolytes
Lighting
illumination
electrolytes
wafers

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Enhancement of electroluminescence from n-type porous silicon and its photoelectrochemical behavior. / Ogasawara, Kako; Momma, Toshiyuki; Osaka, Tetsuya.

In: Journal of the Electrochemical Society, Vol. 142, No. 6, 06.1995, p. 1874-1880.

Research output: Contribution to journalArticle

@article{171f0e3739124fb6bf467b42928fac27,
title = "Enhancement of electroluminescence from n-type porous silicon and its photoelectrochemical behavior",
abstract = "In a study of the electroluminescence (EL) of porous silicon on an n-type Si wafer using an S2O8 2- electrolyte solution, the addition of C2H5OH to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current density for forming the porous n-Si was above or below the saturated photocurrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent density, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocurrent density. The electrochemical and enhanced electroluminescent properties of the two types of porous silicon were studied.",
author = "Kako Ogasawara and Toshiyuki Momma and Tetsuya Osaka",
year = "1995",
month = "6",
language = "English",
volume = "142",
pages = "1874--1880",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "6",

}

TY - JOUR

T1 - Enhancement of electroluminescence from n-type porous silicon and its photoelectrochemical behavior

AU - Ogasawara, Kako

AU - Momma, Toshiyuki

AU - Osaka, Tetsuya

PY - 1995/6

Y1 - 1995/6

N2 - In a study of the electroluminescence (EL) of porous silicon on an n-type Si wafer using an S2O8 2- electrolyte solution, the addition of C2H5OH to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current density for forming the porous n-Si was above or below the saturated photocurrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent density, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocurrent density. The electrochemical and enhanced electroluminescent properties of the two types of porous silicon were studied.

AB - In a study of the electroluminescence (EL) of porous silicon on an n-type Si wafer using an S2O8 2- electrolyte solution, the addition of C2H5OH to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current density for forming the porous n-Si was above or below the saturated photocurrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent density, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocurrent density. The electrochemical and enhanced electroluminescent properties of the two types of porous silicon were studied.

UR - http://www.scopus.com/inward/record.url?scp=0029323606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029323606&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029323606

VL - 142

SP - 1874

EP - 1880

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 6

ER -