Enhancement of Electroluminescence from n-Type Porous Silicon and Its Photoelectrochemical Behavior

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In a study of the electroluminescence (EL) of porous silicon on an n-type Si wafer using an S2O82- electrolyte solution, the addition of C3H5OH to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current density for forming the porous n-Si was above or below the saturated photocurrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent density, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocurrent density. The electrochemical and enhanced electroluminescent properties of the two types of porous silicon were studied.

Original languageEnglish
Pages (from-to)1874-1880
Number of pages7
JournalJournal of the Electrochemical Society
Volume142
Issue number6
DOIs
Publication statusPublished - 1995 Jan 1

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this