Enhancement of Jc and crystal alignment by reverse ISD method

T. Taneda*, K. Muranaka, K. Fujino, K. Ohmatsu, H. Takei, Y. Sato, S. Honjo, Y. Takahashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A new deposition technique, 'reverse' inclined substrate deposition (RISD), was introduced to reduce the 〈1 0 0〉 tilt angle of the buffer layer against the substrate normal, originated by the conventional ISD method. The tilt angles of both superconducting layer and cap layer were successfully reduced. The Jc values were enhanced by the RISD method. The Jc values of RISD samples were approximately two times as high as those of ISD samples. The cap layer was also deposited on both ISD and RISD buffer layers. Both 〈1 0 0〉 tilt angle and in-plane orientation were improved by the RISD.

Original languageEnglish
Pages (from-to)944-949
Number of pages6
JournalPhysica C: Superconductivity and its applications
Issue numberPART 2
Publication statusPublished - 2002 Oct
Externally publishedYes


  • Critical current density
  • Inclined substrate deposition
  • Pulsed laser deposition
  • RE-123 coated conductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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