Enhancement of nanovoid formation in annealed amorphous Al 2O3 including W

R. Nakamura; M. Ishimaru; A. Hirata; K. Sato; M. Tane; H. Kimizuka; T. Shudo; T. J. Konno; H. Nakajima

doi:10.1063/1.3639290

Enhancement of nanovoid formation in annealed amorphous Al ₂O₃ including W

R. Nakamura^*, M. Ishimaru, A. Hirata, K. Sato, M. Tane, H. Kimizuka, T. Shudo, T. J. Konno, H. Nakajima

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The effect of W on the nanovoid formation in annealed amorphous Al ₂O₃ was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al₂O₃ (without W) and resistance-heating deposited Al₂O₃ (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al ₂O₃ showed that the introduction of W into amorphous Al₂O₃ brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al₂O₃ prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.

Original language	English
Article number	064324
Journal	Journal of Applied Physics
Volume	110
Issue number	6
DOIs	https://doi.org/10.1063/1.3639290
Publication status	Published - 2011 Sept 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Enhancement of nanovoid formation in annealed amorphous Al 2O3 including W",

abstract = "The effect of W on the nanovoid formation in annealed amorphous Al 2O3 was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al2O3 (without W) and resistance-heating deposited Al2O3 (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al 2O3 showed that the introduction of W into amorphous Al2O3 brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al2O3 prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.",

author = "R. Nakamura and M. Ishimaru and A. Hirata and K. Sato and M. Tane and H. Kimizuka and T. Shudo and Konno, {T. J.} and H. Nakajima",

note = "Funding Information: TEM observations using H-800 and JEM-3000F were performed at the Research Center for Ultra-High Voltage Electron Microscopy and the Comprehensive Analysis Center of ISIR, Osaka University, respectively. This work was supported by Grant-in-Aid for Young Scientists (B) (No. 21760556) and also by Priority Assistance for the Formation of World Wide Renowned Centers of Research–The Global COE Program (Project: Center of Excellence for Advanced Structural and Functional Materials Design), from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

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doi = "10.1063/1.3639290",

language = "English",

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AU - Nakamura, R.

AU - Ishimaru, M.

AU - Hirata, A.

AU - Sato, K.

AU - Tane, M.

AU - Kimizuka, H.

AU - Shudo, T.

AU - Konno, T. J.

AU - Nakajima, H.

N1 - Funding Information: TEM observations using H-800 and JEM-3000F were performed at the Research Center for Ultra-High Voltage Electron Microscopy and the Comprehensive Analysis Center of ISIR, Osaka University, respectively. This work was supported by Grant-in-Aid for Young Scientists (B) (No. 21760556) and also by Priority Assistance for the Formation of World Wide Renowned Centers of Research–The Global COE Program (Project: Center of Excellence for Advanced Structural and Functional Materials Design), from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2011/9/15

Y1 - 2011/9/15

N2 - The effect of W on the nanovoid formation in annealed amorphous Al 2O3 was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al2O3 (without W) and resistance-heating deposited Al2O3 (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al 2O3 showed that the introduction of W into amorphous Al2O3 brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al2O3 prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.

AB - The effect of W on the nanovoid formation in annealed amorphous Al 2O3 was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al2O3 (without W) and resistance-heating deposited Al2O3 (with 10 at. W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al 2O3 showed that the introduction of W into amorphous Al2O3 brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al2O3 prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.

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Enhancement of nanovoid formation in annealed amorphous Al ₂O₃ including W

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