The enhancement of spontaneous emission rate by resonant surface plasmon (SP) coupling was discussed. An In0.18Ga0.82N/GaN quantum well (QW) was grown by metal-organic chemical vapor deposition on sapphire substrate with a GaN buffer layer and an In0.04Ga0.96N reference layer. The luminescence signal was dispersed in a single grating monochrometer and detected by a streak camera with 15-ps temporal resolution. The results showed that the silver-coated surface exhibited a bi-exponential decay for emission between 2.61 and 2.94eV.
|Number of pages||1|
|Journal||Optics and Photonics News|
|Publication status||Published - 2002|