Enhancement of spontaneous emission rate by resonant surface plasmon coupling

Arup Neogi, Chang Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, Eli Yablonovitch

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    Abstract

    The enhancement of spontaneous emission rate by resonant surface plasmon (SP) coupling was discussed. An In0.18Ga0.82N/GaN quantum well (QW) was grown by metal-organic chemical vapor deposition on sapphire substrate with a GaN buffer layer and an In0.04Ga0.96N reference layer. The luminescence signal was dispersed in a single grating monochrometer and detected by a streak camera with 15-ps temporal resolution. The results showed that the silver-coated surface exhibited a bi-exponential decay for emission between 2.61 and 2.94eV.

    Original languageEnglish
    Pages (from-to)38
    Number of pages1
    JournalOptics and Photonics News
    Volume13
    Issue number12
    Publication statusPublished - 2002

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    Cite this

    Neogi, A., Lee, C. W., Everitt, H. O., Kuroda, T., Tackeuchi, A., & Yablonovitch, E. (2002). Enhancement of spontaneous emission rate by resonant surface plasmon coupling. Optics and Photonics News, 13(12), 38.