Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, E. Yablonovitch

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

Original languageEnglish
Pages258-259
Number of pages2
Publication statusPublished - 2002 Jan 1
Externally publishedYes
EventQuantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States
Duration: 2002 May 192002 May 24

Conference

ConferenceQuantum Electronics and Laser Science (QELS) 2002
CountryUnited States
CityLong Beach, CA
Period02/5/1902/5/24

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Neogi, A., Lee, C. W., Everitt, H. O., Kuroda, T., Tackeuchi, A., & Yablonovitch, E. (2002). Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling. 258-259. Paper presented at Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, United States.