Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

A. Neogi, C. W. Lee, H. O. Everitt, T. Kuroda, Atsushi Tackeuchi, E. Yablonovitch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

Original languageEnglish
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Pages258-259
Number of pages2
Volume74
Publication statusPublished - 2002
Externally publishedYes
EventQuantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA
Duration: 2002 May 192002 May 24

Other

OtherQuantum Electronics and Laser Science (QELS) 2002
CityLong Beach, CA
Period02/5/1902/5/24

Fingerprint

spontaneous emission
nitrides
augmentation
caps
film thickness
decay

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Neogi, A., Lee, C. W., Everitt, H. O., Kuroda, T., Tackeuchi, A., & Yablonovitch, E. (2002). Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 74, pp. 258-259)

Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling. / Neogi, A.; Lee, C. W.; Everitt, H. O.; Kuroda, T.; Tackeuchi, Atsushi; Yablonovitch, E.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 74 2002. p. 258-259.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Neogi, A, Lee, CW, Everitt, HO, Kuroda, T, Tackeuchi, A & Yablonovitch, E 2002, Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. vol. 74, pp. 258-259, Quantum Electronics and Laser Science (QELS) 2002, Long Beach, CA, 02/5/19.
Neogi A, Lee CW, Everitt HO, Kuroda T, Tackeuchi A, Yablonovitch E. Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 74. 2002. p. 258-259
Neogi, A. ; Lee, C. W. ; Everitt, H. O. ; Kuroda, T. ; Tackeuchi, Atsushi ; Yablonovitch, E. / Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. Vol. 74 2002. pp. 258-259
@inproceedings{d229248b53bd4eb480db7b6c0d0037b3,
title = "Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling",
abstract = "Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.",
author = "A. Neogi and Lee, {C. W.} and Everitt, {H. O.} and T. Kuroda and Atsushi Tackeuchi and E. Yablonovitch",
year = "2002",
language = "English",
volume = "74",
pages = "258--259",
booktitle = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

}

TY - GEN

T1 - Enhancement of spontaneous emission rate in nitrides by resonant surface plasmon coupling

AU - Neogi, A.

AU - Lee, C. W.

AU - Everitt, H. O.

AU - Kuroda, T.

AU - Tackeuchi, Atsushi

AU - Yablonovitch, E.

PY - 2002

Y1 - 2002

N2 - Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

AB - Spontaneous emission rate in nitrides was enhanced. The degree of enhancement increased with increasing film thickness and decreasing GaN cap layer thickness. Enhancement factors of almost 100 were indicated by dramatically accelerated TRPL decay at a frequency corresponding to the SP resonance.

UR - http://www.scopus.com/inward/record.url?scp=0036360560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036360560&partnerID=8YFLogxK

M3 - Conference contribution

VL - 74

SP - 258

EP - 259

BT - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

ER -