Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Arup Neogi, Chang Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, Eli Yablonovitch

    Research output: Contribution to journalArticle

    325 Citations (Scopus)

    Abstract

    Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.

    Original languageEnglish
    Article number153305
    Pages (from-to)1533051-1533054
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume66
    Issue number15
    Publication statusPublished - 2002 Oct 15

    Fingerprint

    Spontaneous emission
    spontaneous emission
    Semiconductor quantum wells
    quantum wells
    Silver
    augmentation
    silver
    metal coatings
    Metal coatings
    Photoluminescence
    photoluminescence

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Neogi, A., Lee, C. W., Everitt, H. O., Kuroda, T., Tackeuchi, A., & Yablonovitch, E. (2002). Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling. Physical Review B - Condensed Matter and Materials Physics, 66(15), 1533051-1533054. [153305].

    Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling. / Neogi, Arup; Lee, Chang Won; Everitt, Henry O.; Kuroda, Takamasa; Tackeuchi, Atsushi; Yablonovitch, Eli.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 15, 153305, 15.10.2002, p. 1533051-1533054.

    Research output: Contribution to journalArticle

    Neogi, A, Lee, CW, Everitt, HO, Kuroda, T, Tackeuchi, A & Yablonovitch, E 2002, 'Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling', Physical Review B - Condensed Matter and Materials Physics, vol. 66, no. 15, 153305, pp. 1533051-1533054.
    Neogi, Arup ; Lee, Chang Won ; Everitt, Henry O. ; Kuroda, Takamasa ; Tackeuchi, Atsushi ; Yablonovitch, Eli. / Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 66, No. 15. pp. 1533051-1533054.
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    AU - Tackeuchi, Atsushi

    AU - Yablonovitch, Eli

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