Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Arup Neogi, Chang Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, Eli Yablonovitch

Research output: Contribution to journalArticlepeer-review

333 Citations (Scopus)

Abstract

Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.

Original languageEnglish
Article number153305
Pages (from-to)1533051-1533054
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number15
DOIs
Publication statusPublished - 2002 Oct 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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