Enhancement/depletion MESFETSs of diamond and their logic circuits

A. Hokazono, T. Ishikura, K. Nakamura, S. Yamashita, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    62 Citations (Scopus)

    Abstract

    Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode MESFETs have been fabricated by changing the metals of the gate electrode. The threshold voltages of MESFETs depend on the electronegativity of the metals. A MESFET with a Cr gate was operated in depletion mode and exhibited a peak transconductance of 12.3 mS mm-1, which is the highest in diamond FETs. This high performance can be obtained by a self-aligned gate fabrication process, which minimizes the spacing between the ohmic contacts and the Schottky contact. By utilizing an E-MESFET for the driver and a D-MESFET for the active load, E/D-type logic circuits such as NOT, NAND and NOR circuits have been fabricated for the first time.

    Original languageEnglish
    Pages (from-to)339-343
    Number of pages5
    JournalDiamond and Related Materials
    Volume6
    Issue number2-4
    Publication statusPublished - 1997 Mar

    Fingerprint

    logic circuits
    Diamond
    Logic circuits
    Diamonds
    depletion
    field effect transistors
    Metals
    diamonds
    Electronegativity
    Ohmic contacts
    augmentation
    Diamond films
    Transconductance
    Field effect transistors
    Threshold voltage
    Fabrication
    Electrodes
    Networks (circuits)
    electric contacts
    transconductance

    Keywords

    • Device
    • Hydrogen
    • Ion bombardment
    • Metal

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Hokazono, A., Ishikura, T., Nakamura, K., Yamashita, S., & Kawarada, H. (1997). Enhancement/depletion MESFETSs of diamond and their logic circuits. Diamond and Related Materials, 6(2-4), 339-343.

    Enhancement/depletion MESFETSs of diamond and their logic circuits. / Hokazono, A.; Ishikura, T.; Nakamura, K.; Yamashita, S.; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 6, No. 2-4, 03.1997, p. 339-343.

    Research output: Contribution to journalArticle

    Hokazono, A, Ishikura, T, Nakamura, K, Yamashita, S & Kawarada, H 1997, 'Enhancement/depletion MESFETSs of diamond and their logic circuits', Diamond and Related Materials, vol. 6, no. 2-4, pp. 339-343.
    Hokazono A, Ishikura T, Nakamura K, Yamashita S, Kawarada H. Enhancement/depletion MESFETSs of diamond and their logic circuits. Diamond and Related Materials. 1997 Mar;6(2-4):339-343.
    Hokazono, A. ; Ishikura, T. ; Nakamura, K. ; Yamashita, S. ; Kawarada, Hiroshi. / Enhancement/depletion MESFETSs of diamond and their logic circuits. In: Diamond and Related Materials. 1997 ; Vol. 6, No. 2-4. pp. 339-343.
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