Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits

Akira Hokazono, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    26 Citations (Scopus)

    Abstract

    Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode metal-semiconductor field effect transistors were fabricated on the same surface by changing the metals of the gate electrode. The threshold voltages of p-type metal semiconductor field effect transistors (MESFETs) can be controlled from negative (enhancement mode) to positive (depletion mode) as the electronegativities of gate metals increase. By the realization of high transconductance and the fabrication of enhancement and depletion mode MESFETs, the E/D-type logic circuits such as inverter, NAND and NOR circuits were fabricated for the first time.

    Original languageEnglish
    Pages (from-to)7133-7139
    Number of pages7
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume36
    Issue number12 A
    Publication statusPublished - 1997 Dec

    Fingerprint

    MESFET devices
    logic circuits
    Logic circuits
    Field effect transistors
    Diamonds
    depletion
    field effect transistors
    diamonds
    augmentation
    metals
    Electronegativity
    Diamond films
    Transconductance
    Metals
    Threshold voltage
    Fabrication
    transconductance
    Electrodes
    diamond films
    Networks (circuits)

    Keywords

    • As-grown surface
    • Depletion mode MESFET
    • Diamond
    • E/D-type logic circuit
    • Electronegativity
    • Enhancement mode MESFET
    • Hydrogen termination
    • Microwave plasma-assisted CVD
    • Schottky barrier height
    • Threshold voltage

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Engineering(all)

    Cite this

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    abstract = "Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode metal-semiconductor field effect transistors were fabricated on the same surface by changing the metals of the gate electrode. The threshold voltages of p-type metal semiconductor field effect transistors (MESFETs) can be controlled from negative (enhancement mode) to positive (depletion mode) as the electronegativities of gate metals increase. By the realization of high transconductance and the fabrication of enhancement and depletion mode MESFETs, the E/D-type logic circuits such as inverter, NAND and NOR circuits were fabricated for the first time.",
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    AU - Hokazono, Akira

    AU - Kawarada, Hiroshi

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    N2 - Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode metal-semiconductor field effect transistors were fabricated on the same surface by changing the metals of the gate electrode. The threshold voltages of p-type metal semiconductor field effect transistors (MESFETs) can be controlled from negative (enhancement mode) to positive (depletion mode) as the electronegativities of gate metals increase. By the realization of high transconductance and the fabrication of enhancement and depletion mode MESFETs, the E/D-type logic circuits such as inverter, NAND and NOR circuits were fabricated for the first time.

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    KW - Depletion mode MESFET

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    KW - E/D-type logic circuit

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    KW - Hydrogen termination

    KW - Microwave plasma-assisted CVD

    KW - Schottky barrier height

    KW - Threshold voltage

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