Abstract
A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.
| Original language | English |
|---|---|
| Article number | 046501 |
| Journal | Applied Physics Express |
| Volume | 4 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Apr 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Hori, M., Shinada, T., Taira, K., Komatsubara, A., Ono, Y., Tanii, T., Endoh, T., & Ohdomari, I. (2011). Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. Applied Physics Express, 4(4), [046501]. https://doi.org/10.1143/APEX.4.046501