TY - JOUR
T1 - Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping
AU - Hori, Masahiro
AU - Shinada, Takahiro
AU - Taira, Keigo
AU - Komatsubara, Akira
AU - Ono, Yukinori
AU - Tanii, Takashi
AU - Endoh, Tetsuo
AU - Ohdomari, Iwao
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/4
Y1 - 2011/4
N2 - A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.
AB - A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.
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U2 - 10.1143/APEX.4.046501
DO - 10.1143/APEX.4.046501
M3 - Article
AN - SCOPUS:79954430803
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 4
M1 - 046501
ER -