Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Masahiro Hori; Takahiro Shinada; Keigo Taira; Akira Komatsubara; Yukinori Ono; Takashi Tanii; Tetsuo Endoh; Iwao Ohdomari

doi:10.1143/APEX.4.046501

Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

Original language	English
Article number	046501
Journal	Applied Physics Express
Volume	4
Issue number	4
DOIs	https://doi.org/10.1143/APEX.4.046501
Publication status	Published - 2011 Apr

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. / Hori, Masahiro; Shinada, Takahiro; Taira, Keigo; Komatsubara, Akira; Ono, Yukinori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.

In: Applied Physics Express, Vol. 4, No. 4, 046501, 04.2011.

Research output: Contribution to journal › Article › peer-review

@article{3fc5a7cf6e9d492ebca2efd4d10efca0,

title = "Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping",

abstract = "A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.",

author = "Masahiro Hori and Takahiro Shinada and Keigo Taira and Akira Komatsubara and Yukinori Ono and Takashi Tanii and Tetsuo Endoh and Iwao Ohdomari",

year = "2011",

month = apr,

doi = "10.1143/APEX.4.046501",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

AU - Hori, Masahiro

AU - Shinada, Takahiro

AU - Taira, Keigo

AU - Komatsubara, Akira

AU - Ono, Yukinori

AU - Tanii, Takashi

AU - Endoh, Tetsuo

AU - Ohdomari, Iwao

PY - 2011/4

Y1 - 2011/4

N2 - A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

AB - A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

UR - http://www.scopus.com/inward/record.url?scp=79954430803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79954430803&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.046501

DO - 10.1143/APEX.4.046501

M3 - Article

AN - SCOPUS:79954430803

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 4

M1 - 046501

ER -

Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Abstract

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