Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

    Original languageEnglish
    Article number046501
    JournalApplied Physics Express
    Volume4
    Issue number4
    DOIs
    Publication statusPublished - 2011 Apr

    Fingerprint

    Bias voltage
    Doping (additives)
    Ions
    electric potential
    Substrates
    Electrons
    ions
    electrons
    Electron emission
    secondary emission
    Ion implantation
    electron emission
    ion implantation
    incidence
    Semiconductor materials

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. / Hori, Masahiro; Shinada, Takahiro; Taira, Keigo; Komatsubara, Akira; Ono, Yukinori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.

    In: Applied Physics Express, Vol. 4, No. 4, 046501, 04.2011.

    Research output: Contribution to journalArticle

    Hori, Masahiro ; Shinada, Takahiro ; Taira, Keigo ; Komatsubara, Akira ; Ono, Yukinori ; Tanii, Takashi ; Endoh, Tetsuo ; Ohdomari, Iwao. / Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. In: Applied Physics Express. 2011 ; Vol. 4, No. 4.
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