Abstract
A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.
Original language | English |
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Article number | 046501 |
Journal | Applied Physics Express |
Volume | 4 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2011 Apr |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)