Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    Research output: Contribution to journal › Article

    9 Citations (Scopus)

    Abstract

    A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

    Original languageEnglish
    Article number046501
    JournalApplied Physics Express
    Volume4
    Issue number4
    DOIs
    Publication statusPublished - 2011 Apr

    Fingerprint

    Bias voltage
    Doping (additives)
    Ions
    electric potential
    Substrates
    Electrons
    ions
    electrons
    Electron emission
    secondary emission
    Ion implantation
    electron emission
    ion implantation
    incidence
    Semiconductor materials

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. / Hori, Masahiro; Shinada, Takahiro; Taira, Keigo; Komatsubara, Akira; Ono, Yukinori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.

    In: Applied Physics Express, Vol. 4, No. 4, 046501, 04.2011.

    Research output: Contribution to journal › Article

    Hori, M, Shinada, T, Taira, K, Komatsubara, A, Ono, Y, Tanii, T, Endoh, T & Ohdomari, I 2011, 'Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping', Applied Physics Express, vol. 4, no. 4, 046501. https://doi.org/10.1143/APEX.4.046501
    Hori M, Shinada T, Taira K, Komatsubara A, Ono Y, Tanii T et al. Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. Applied Physics Express. 2011 Apr;4(4). 046501. https://doi.org/10.1143/APEX.4.046501
    Hori, Masahiro ; Shinada, Takahiro ; Taira, Keigo ; Komatsubara, Akira ; Ono, Yukinori ; Tanii, Takashi ; Endoh, Tetsuo ; Ohdomari, Iwao. / Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. In: Applied Physics Express. 2011 ; Vol. 4, No. 4.
    @article{3fc5a7cf6e9d492ebca2efd4d10efca0,
    title = "Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping",
    abstract = "A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90{\%} due to the low probability of SE emission, but has been enhanced to almost 100{\%} by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.",
    author = "Masahiro Hori and Takahiro Shinada and Keigo Taira and Akira Komatsubara and Yukinori Ono and Takashi Tanii and Tetsuo Endoh and Iwao Ohdomari",
    year = "2011",
    month = "4",
    doi = "10.1143/APEX.4.046501",
    language = "English",
    volume = "4",
    journal = "Applied Physics Express",
    issn = "1882-0778",
    publisher = "Japan Society of Applied Physics",
    number = "4",

    }

    TY - JOUR

    T1 - Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

    AU - Hori, Masahiro

    AU - Shinada, Takahiro

    AU - Taira, Keigo

    AU - Komatsubara, Akira

    AU - Ono, Yukinori

    AU - Tanii, Takashi

    AU - Endoh, Tetsuo

    AU - Ohdomari, Iwao

    PY - 2011/4

    Y1 - 2011/4

    N2 - A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

    AB - A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

    UR - http://www.scopus.com/inward/record.url?scp=79954430803&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=79954430803&partnerID=8YFLogxK

    U2 - 10.1143/APEX.4.046501

    DO - 10.1143/APEX.4.046501

    M3 - Article

    VL - 4

    JO - Applied Physics Express

    JF - Applied Physics Express

    SN - 1882-0778

    IS - 4

    M1 - 046501

    ER -

    Access to Document