Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping

Masahiro Hori, Takahiro Shinada, Keigo Taira, Akira Komatsubara, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    Research output: Contribution to journal › Article

    9 Citations (Scopus)

    Abstract

    A single-ion implantation technique that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached has been developed. The key to controlling the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. The SE detection efficiency currently achieved is 90% due to the low probability of SE emission, but has been enhanced to almost 100% by increasing the number of SEs by controlling the substrate bias voltage. This improvement has accelerated the prospects for realizing single-dopant devices, which are necessary for the ultimate control of the ion number.

    Original languageEnglish
    Article number046501
    JournalApplied Physics Express
    Volume4
    Issue number4
    DOIs
    Publication statusPublished - 2011 Apr

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    Bias voltage
    Doping (additives)
    Ions
    electric potential
    Substrates
    Electrons
    ions
    electrons
    Electron emission
    secondary emission
    Ion implantation
    electron emission
    ion implantation
    incidence
    Semiconductor materials

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. / Hori, Masahiro; Shinada, Takahiro; Taira, Keigo; Komatsubara, Akira; Ono, Yukinori; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.

    In: Applied Physics Express, Vol. 4, No. 4, 046501, 04.2011.

    Research output: Contribution to journal › Article

    Hori, M, Shinada, T, Taira, K, Komatsubara, A, Ono, Y, Tanii, T, Endoh, T & Ohdomari, I 2011, 'Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping', Applied Physics Express, vol. 4, no. 4, 046501. https://doi.org/10.1143/APEX.4.046501
    Hori M, Shinada T, Taira K, Komatsubara A, Ono Y, Tanii T et al. Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. Applied Physics Express. 2011 Apr;4(4). 046501. https://doi.org/10.1143/APEX.4.046501
    Hori, Masahiro ; Shinada, Takahiro ; Taira, Keigo ; Komatsubara, Akira ; Ono, Yukinori ; Tanii, Takashi ; Endoh, Tetsuo ; Ohdomari, Iwao. / Enhancing single-ion detection efficiency by applying substrate bias voltage for deterministic single-ion doping. In: Applied Physics Express. 2011 ; Vol. 4, No. 4.
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