Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays

T. Terunuma, Takanobu Watanabe, T. Shinada, I. Ohdomari, Y. Kamakura, K. Taniguchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Electron transport in bulk silicon with ordered dopant arrays is studied using an ensemble Monte Carlo (EMC) technique coupled with molecular dynamics (MD) method. This work is motivated by a recently developed single-ion implantation (SII) technique, which enables us to fabricate a semiconductor device with an ordered dopant array. We numerically estimate the carrier mobility in silicon with such an ordered dopant array comparing to that with conventional random dopant distribution. The calculation results show that electron mobility can be enhanced in the ordered dopant array if the fluctuation of dopant position is less than 5 nm.

    Original languageEnglish
    Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    Pages29-32
    Number of pages4
    DOIs
    Publication statusPublished - 2008
    Event2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 - Hakone
    Duration: 2008 Sep 92008 Sep 11

    Other

    Other2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008
    CityHakone
    Period08/9/908/9/11

    Fingerprint

    Electron mobility
    Molecular Dynamics Simulation
    Molecular dynamics
    Silicon
    Ensemble
    Doping (additives)
    Electron
    Computer simulation
    Ion Implantation
    Electron Transport
    Monte Carlo Techniques
    Semiconductor Devices
    Molecular Dynamics
    Carrier mobility
    Fluctuations
    Semiconductor devices
    Ion implantation
    Estimate

    Keywords

    • Coulomb scattering
    • Electron mobility
    • Ordered dopant arrays
    • Single ion implantation

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

    Cite this

    Terunuma, T., Watanabe, T., Shinada, T., Ohdomari, I., Kamakura, Y., & Taniguchi, K. (2008). Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 29-32). [4648229] https://doi.org/10.1109/SISPAD.2008.4648229

    Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays. / Terunuma, T.; Watanabe, Takanobu; Shinada, T.; Ohdomari, I.; Kamakura, Y.; Taniguchi, K.

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2008. p. 29-32 4648229.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Terunuma, T, Watanabe, T, Shinada, T, Ohdomari, I, Kamakura, Y & Taniguchi, K 2008, Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 4648229, pp. 29-32, 2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, Hakone, 08/9/9. https://doi.org/10.1109/SISPAD.2008.4648229
    Terunuma T, Watanabe T, Shinada T, Ohdomari I, Kamakura Y, Taniguchi K. Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2008. p. 29-32. 4648229 https://doi.org/10.1109/SISPAD.2008.4648229
    Terunuma, T. ; Watanabe, Takanobu ; Shinada, T. ; Ohdomari, I. ; Kamakura, Y. ; Taniguchi, K. / Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2008. pp. 29-32
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    AU - Kamakura, Y.

    AU - Taniguchi, K.

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