A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.
|Number of pages||4|
|Journal||Physical Review Letters|
|Publication status||Published - 2001 May 21|
ASJC Scopus subject areas
- Physics and Astronomy(all)