Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

S. Munetoh, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka

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29 Citations (Scopus)


A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

Original languageEnglish
Pages (from-to)4879-4882
Number of pages4
JournalPhysical Review Letters
Issue number21
Publication statusPublished - 2001 May 21
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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