Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

S. Munetoh; K. Moriguchi; K. Kamei; A. Shintani; T. Motooka

doi:10.1103/PhysRevLett.86.4879

Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

S. Munetoh^*, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

Original language	English
Pages (from-to)	4879-4882
Number of pages	4
Journal	Physical Review Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.86.4879
Publication status	Published - 2001 May 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.86.4879

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title = "Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study",

abstract = "A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.",

author = "S. Munetoh and K. Moriguchi and K. Kamei and A. Shintani and T. Motooka",

year = "2001",

month = may,

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AU - Munetoh, S.

AU - Moriguchi, K.

AU - Kamei, K.

AU - Shintani, A.

AU - Motooka, T.

PY - 2001/5/21

Y1 - 2001/5/21

N2 - A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

AB - A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

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JO - Physical Review Letters

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Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

Abstract

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