Epitaxial growth in Cu/Si(001)2 × 1 at high temperatures

T. Ichinokawa, T. Inoue, Izumi Hirasawa, Y. Sakai

    Research output: Contribution to journalArticle

    22 Citations (Scopus)

    Abstract

    The growth mechanism of Cu/Si(001)2 × 1 has been studied by means of scanning RHEED (reflection high energy electron diffraction) microscopy and scanning Auger electron spectroscopy. We obtained the following experimental results: (1) At room temperature, an intermixing layer of Cu with the Si surface is formed and no defined interface structure is observed. (2) At high temperatures (T ∼ 500 °C), anisotropic growth of islands is observed on Si(001)2 × 1 and the long axis of the islands corresponds to the direction normal to the dimmer row. The distribution of the anisotropic islands is closely correlated with the domain structure of 2 × 1 and 1 × 2. (3) The islands are composed of Cu-silicide and the interface regions between the islands and the substrate are rich in Si. (4) The small reduction of the Si Auger signal with increasing Cu coverage (0-100 ML) upon deposition at 500 ° C is explained by three-dimensional nucleation of islands with a low density of on the Si clean surface 1 × 1 structure. Island formation occurs in a modified mode of Volmer-Weber growth. Lastly, the nucleation mechanism of the Cu-silicide islands is discussed.

    Original languageEnglish
    Pages (from-to)416-424
    Number of pages9
    JournalSurface Science
    Volume241
    Issue number3
    DOIs
    Publication statusPublished - 1991 Jan 2

    Fingerprint

    Epitaxial growth
    Nucleation
    Scanning
    Reflection high energy electron diffraction
    Auger electron spectroscopy
    Temperature
    Microscopic examination
    nucleation
    Substrates
    scanning
    high energy electrons
    Auger spectroscopy
    electron spectroscopy
    electron diffraction
    microscopy
    room temperature

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Condensed Matter Physics
    • Surfaces and Interfaces

    Cite this

    Epitaxial growth in Cu/Si(001)2 × 1 at high temperatures. / Ichinokawa, T.; Inoue, T.; Hirasawa, Izumi; Sakai, Y.

    In: Surface Science, Vol. 241, No. 3, 02.01.1991, p. 416-424.

    Research output: Contribution to journalArticle

    Ichinokawa, T. ; Inoue, T. ; Hirasawa, Izumi ; Sakai, Y. / Epitaxial growth in Cu/Si(001)2 × 1 at high temperatures. In: Surface Science. 1991 ; Vol. 241, No. 3. pp. 416-424.
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